標題: | Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs |
作者: | Chang, YH Kuo, HC Lai, FI Chang, YA Lu, CY Laih, LH Wang, SC 光電工程學系 Department of Photonics |
關鍵字: | high-speed electronics;InGaAsP-InGaP;strain-compensated;vertical-cavity surface-emitting lasers (VCSELs) |
公開日期: | 1-十二月-2004 |
摘要: | This paper presents the fabrication and characteristics of high-performance 850-mn InGaAsP-InGaP strain-compensated multiple-quantum-well (MQW) vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP-InGaP MQW's composition was optimized through theoretical calculations, and the growth condition was optimized using photoluminescence. These VCSELs exhibit superior performance with characteristics threshold currents similar to0.4 mA and slope efficiencies similar to0.6 mW/mA. The threshold current change with temperature is less than 0.2 mA, and the slope efficiency drops less than similar to30% when the substrate temperature is raised from room temperature to 85degreesC. A high modulation bandwidth of 14.5 GHz and a modulation current efficiency factor of 11.6 GHz/(mA) (1/2) are demonstrated. The authors have accumulated life test data up to 1000 h at 70degreesC/8 mA. |
URI: | http://dx.doi.org/10.1109/JLT.2004.834835 http://hdl.handle.net/11536/25596 |
ISSN: | 0733-8724 |
DOI: | 10.1109/JLT.2004.834835 |
期刊: | JOURNAL OF LIGHTWAVE TECHNOLOGY |
Volume: | 22 |
Issue: | 12 |
起始頁: | 2828 |
結束頁: | 2833 |
顯示於類別: | 期刊論文 |