Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication

Abstract

In this paper, we demonstrate high performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior performance with threshold currents of similar to 0.4 mA, and slope efficiencies of similar to 0.6 mW/mA. High modulation bandwidth of 14.5 GHz and modulation current efficiency factor of 11.6 GHz/(mA)(1/2) are demonstrated. We have accumulated life test data up to 1000 hours at 70 degrees C/8mA. In addition, we also report a high speed planarized 850nm oxide-implanted VCSELs process that does not require semiinsulating substrates, polyimide planarization process, or very small pad areas, therefore very promising in mass manufacture.