標題: | Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs |
作者: | Chang, YS Kuo, HC Lai, FI Chang, YA Laih, LH Wang, SC 光電工程學系 Department of Photonics |
關鍵字: | MOCVD;InGaAsP;VCSELs;strain-compensated;high speed |
公開日期: | 2004 |
摘要: | We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents similar to0.4 mA, and slope efficiencies similar to 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than similar to30% when the substrate temperature is raised from room temperature to 85degreesC. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25degreesC to 85degreesC. |
URI: | http://hdl.handle.net/11536/18178 http://dx.doi.org/10.1117/12.530055 |
ISBN: | 0-8194-5272-6 |
ISSN: | 0277-786X |
DOI: | 10.1117/12.530055 |
期刊: | VERTICAL-CAVITY SURFACE-EMITTING LASERS VIII |
Volume: | 5364 |
起始頁: | 221 |
結束頁: | 226 |
顯示於類別: | 會議論文 |