標題: Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs
作者: Chang, YS
Kuo, HC
Lai, FI
Chang, YA
Laih, LH
Wang, SC
光電工程學系
Department of Photonics
關鍵字: MOCVD;InGaAsP;VCSELs;strain-compensated;high speed
公開日期: 2004
摘要: We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents similar to0.4 mA, and slope efficiencies similar to 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than similar to30% when the substrate temperature is raised from room temperature to 85degreesC. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25degreesC to 85degreesC.
URI: http://hdl.handle.net/11536/18178
http://dx.doi.org/10.1117/12.530055
ISBN: 0-8194-5272-6
ISSN: 0277-786X
DOI: 10.1117/12.530055
期刊: VERTICAL-CAVITY SURFACE-EMITTING LASERS VIII
Volume: 5364
起始頁: 221
結束頁: 226
顯示於類別:會議論文


文件中的檔案:

  1. 000222822200025.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。