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dc.contributor.authorChang, YSen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorLai, FIen_US
dc.contributor.authorChang, YAen_US
dc.contributor.authorLaih, LHen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:25:45Z-
dc.date.available2014-12-08T15:25:45Z-
dc.date.issued2004en_US
dc.identifier.isbn0-8194-5272-6en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/18178-
dc.identifier.urihttp://dx.doi.org/10.1117/12.530055en_US
dc.description.abstractWe present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents similar to0.4 mA, and slope efficiencies similar to 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than similar to30% when the substrate temperature is raised from room temperature to 85degreesC. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25degreesC to 85degreesC.en_US
dc.language.isoen_USen_US
dc.subjectMOCVDen_US
dc.subjectInGaAsPen_US
dc.subjectVCSELsen_US
dc.subjectstrain-compensateden_US
dc.subjecthigh speeden_US
dc.titleImprovement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.530055en_US
dc.identifier.journalVERTICAL-CAVITY SURFACE-EMITTING LASERS VIIIen_US
dc.citation.volume5364en_US
dc.citation.spage221en_US
dc.citation.epage226en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000222822200025-
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