標題: MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength
作者: Kuo, HC
Chang, YS
Lin, CF
Lu, TC
Wang, SC
光電工程學系
Department of Photonics
關鍵字: characterization;metalorganic chemical vapor deposition;semiconducting gallium arsenide;semiconducting quaternary alloys;laser diodes;optical fiber devices
公開日期: 19-一月-2004
摘要: We present in this paper the metalorganic chemical vapor deposition growth and characterization of high-performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP/InGaP MQWs growth condition was optimized using photoluminescence. These VCSELs exhibit superior characteristics, with threshold currents similar to 0.4 mA, and slope efficiencies similar to 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than similar to 30% when the substrate temperature is raised from room temperature to 85degreesC. These VCSELs also demonstrate high-speed modulation bandwidth up to 12.5 Gbit/s from 25degreesC to 85degreesC. (C) 2003 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2003.11.027
http://hdl.handle.net/11536/27130
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2003.11.027
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 261
Issue: 2-3
起始頁: 355
結束頁: 358
顯示於類別:會議論文


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