標題: | MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength |
作者: | Kuo, HC Chang, YS Lin, CF Lu, TC Wang, SC 光電工程學系 Department of Photonics |
關鍵字: | characterization;metalorganic chemical vapor deposition;semiconducting gallium arsenide;semiconducting quaternary alloys;laser diodes;optical fiber devices |
公開日期: | 19-一月-2004 |
摘要: | We present in this paper the metalorganic chemical vapor deposition growth and characterization of high-performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP/InGaP MQWs growth condition was optimized using photoluminescence. These VCSELs exhibit superior characteristics, with threshold currents similar to 0.4 mA, and slope efficiencies similar to 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than similar to 30% when the substrate temperature is raised from room temperature to 85degreesC. These VCSELs also demonstrate high-speed modulation bandwidth up to 12.5 Gbit/s from 25degreesC to 85degreesC. (C) 2003 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.jcrysgro.2003.11.027 http://hdl.handle.net/11536/27130 |
ISSN: | 0022-0248 |
DOI: | 10.1016/j.jcrysgro.2003.11.027 |
期刊: | JOURNAL OF CRYSTAL GROWTH |
Volume: | 261 |
Issue: | 2-3 |
起始頁: | 355 |
結束頁: | 358 |
顯示於類別: | 會議論文 |