標題: Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering
作者: Lai, FI
Hsueh, TH
Chang, YH
Shu, WC
Lai, LH
Kuo, HC
Wang, SC
光電工程學系
Department of Photonics
關鍵字: VCSEL;Si implant;disordering;kink
公開日期: 1-十月-2003
摘要: In this paper, we report a novel implanted vertical surface emitting lasers (VCSELs) utilizing silicon implantation induced disordering. The VCSELs exhibit kink-free current-light Output performance with threshold currents similar to2.4 mA, and the slope efficiencies similar to0.45 W/A. The threshold current change with temperature is minimal and the slope efficiency drops less than similar to30% when the substrate temperature is raised to 90 degreesC. The eye diagram of VCSEL operating at 2.125 Gb/s with 7 mA bias and 10 dB extinction ratio shows very clean eye with jitter less than 30 ps. We have accumulated life test data up to 5000 It at 100 degreesC/20 mA with exceptional reliability and the WHTOL (high temperature and high humidity 85 degreesC/85 operating lifetime) biased at 8 mA has passed over 2000 h. (C) 2003 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/S0038-1101(03)00142-4
http://hdl.handle.net/11536/27512
ISSN: 0038-1101
DOI: 10.1016/S0038-1101(03)00142-4
期刊: SOLID-STATE ELECTRONICS
Volume: 47
Issue: 10
起始頁: 1805
結束頁: 1809
顯示於類別:期刊論文


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