標題: | Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering |
作者: | Lai, FI Hsueh, TH Chang, YH Shu, WC Lai, LH Kuo, HC Wang, SC 光電工程學系 Department of Photonics |
關鍵字: | VCSEL;Si implant;disordering;kink |
公開日期: | 1-十月-2003 |
摘要: | In this paper, we report a novel implanted vertical surface emitting lasers (VCSELs) utilizing silicon implantation induced disordering. The VCSELs exhibit kink-free current-light Output performance with threshold currents similar to2.4 mA, and the slope efficiencies similar to0.45 W/A. The threshold current change with temperature is minimal and the slope efficiency drops less than similar to30% when the substrate temperature is raised to 90 degreesC. The eye diagram of VCSEL operating at 2.125 Gb/s with 7 mA bias and 10 dB extinction ratio shows very clean eye with jitter less than 30 ps. We have accumulated life test data up to 5000 It at 100 degreesC/20 mA with exceptional reliability and the WHTOL (high temperature and high humidity 85 degreesC/85 operating lifetime) biased at 8 mA has passed over 2000 h. (C) 2003 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/S0038-1101(03)00142-4 http://hdl.handle.net/11536/27512 |
ISSN: | 0038-1101 |
DOI: | 10.1016/S0038-1101(03)00142-4 |
期刊: | SOLID-STATE ELECTRONICS |
Volume: | 47 |
Issue: | 10 |
起始頁: | 1805 |
結束頁: | 1809 |
顯示於類別: | 期刊論文 |