Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering

Abstract

In this paper, we report a novel implanted vertical surface emitting lasers (VCSELs) utilizing silicon implantation induced disordering. The VCSELs exhibit kink-free current-light Output performance with threshold currents similar to2.4 mA, and the slope efficiencies similar to0.45 W/A. The threshold current change with temperature is minimal and the slope efficiency drops less than similar to30% when the substrate temperature is raised to 90 degreesC. The eye diagram of VCSEL operating at 2.125 Gb/s with 7 mA bias and 10 dB extinction ratio shows very clean eye with jitter less than 30 ps. We have accumulated life test data up to 5000 It at 100 degreesC/20 mA with exceptional reliability and the WHTOL (high temperature and high humidity 85 degreesC/85 operating lifetime) biased at 8 mA has passed over 2000 h. (C) 2003 Elsevier Ltd. All rights reserved.