As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity

Abstract

We report the utilization of an As+-implanted Al-GaAs region and regrowth method to enhance and control the wet thermal oxidation rate for 850-nm oxide-confined vertical-cavity surface-emitting laser (VCSEL). The oxidation rate of the As+-implanted device showed a four-fold increase over the nonimplanted one at the As+ dosage of 1 x 10(16) cm(-3) and the oxidation temperature of 400 degreesC. 50 side-by-side As+-implanted oxide-confined VCSELs fabricated using the method achieved very uniform performance with a deviation in threshold current of DeltaI(th) similar to 0.2 mA and slope-efficiency of DeltaS.E. similar to 3%.