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dc.contributor.authorLaih, LHen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorLin, GRen_US
dc.contributor.authorLaih, LWen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:39:09Z-
dc.date.available2014-12-08T15:39:09Z-
dc.date.issued2004-06-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2004.827116en_US
dc.identifier.urihttp://hdl.handle.net/11536/26749-
dc.description.abstractWe report the utilization of an As+-implanted Al-GaAs region and regrowth method to enhance and control the wet thermal oxidation rate for 850-nm oxide-confined vertical-cavity surface-emitting laser (VCSEL). The oxidation rate of the As+-implanted device showed a four-fold increase over the nonimplanted one at the As+ dosage of 1 x 10(16) cm(-3) and the oxidation temperature of 400 degreesC. 50 side-by-side As+-implanted oxide-confined VCSELs fabricated using the method achieved very uniform performance with a deviation in threshold current of DeltaI(th) similar to 0.2 mA and slope-efficiency of DeltaS.E. similar to 3%.en_US
dc.language.isoen_USen_US
dc.subjectAs+ -implanteden_US
dc.subjectoxide-confineden_US
dc.subjectvertical-cavity surface-emitting laser (VCSEL)en_US
dc.subjectwet-thermal oxidationen_US
dc.titleAs+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformityen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2004.827116en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume16en_US
dc.citation.issue6en_US
dc.citation.spage1423en_US
dc.citation.epage1425en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000221578300001-
dc.citation.woscount1-
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