標題: Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs
作者: Chang, YH
Kuo, HC
Lai, FI
Chang, YA
Lu, CY
Laih, LH
Wang, SC
光電工程學系
Department of Photonics
關鍵字: high-speed electronics;InGaAsP-InGaP;strain-compensated;vertical-cavity surface-emitting lasers (VCSELs)
公開日期: 1-Dec-2004
摘要: This paper presents the fabrication and characteristics of high-performance 850-mn InGaAsP-InGaP strain-compensated multiple-quantum-well (MQW) vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP-InGaP MQW's composition was optimized through theoretical calculations, and the growth condition was optimized using photoluminescence. These VCSELs exhibit superior performance with characteristics threshold currents similar to0.4 mA and slope efficiencies similar to0.6 mW/mA. The threshold current change with temperature is less than 0.2 mA, and the slope efficiency drops less than similar to30% when the substrate temperature is raised from room temperature to 85degreesC. A high modulation bandwidth of 14.5 GHz and a modulation current efficiency factor of 11.6 GHz/(mA) (1/2) are demonstrated. The authors have accumulated life test data up to 1000 h at 70degreesC/8 mA.
URI: http://dx.doi.org/10.1109/JLT.2004.834835
http://hdl.handle.net/11536/25596
ISSN: 0733-8724
DOI: 10.1109/JLT.2004.834835
期刊: JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume: 22
Issue: 12
起始頁: 2828
結束頁: 2833
Appears in Collections:Articles


Files in This Item:

  1. 000225622600015.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.