High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs

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DC 欄位	值	語言
dc.contributor.author	Kuo, HC	en_US
dc.contributor.author	Chang, YS	en_US
dc.contributor.author	Lai, FY	en_US
dc.contributor.author	Hsueh, TH	en_US
dc.contributor.author	Laih, LH	en_US
dc.contributor.author	Wang, SC	en_US
dc.date.accessioned	2014-12-08T15:40:38Z	-
dc.date.available	2014-12-08T15:40:38Z	-
dc.date.issued	2003-07-10	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:20030672	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27719	-
dc.description.abstract	High performance 850 um InGaAsP/InGaP strain-compensated vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25 to 85degreesC.	en_US
dc.language.iso	en_US	en_US
dc.title	High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:20030672	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	39	en_US
dc.citation.issue	14	en_US
dc.citation.spage	1051	en_US
dc.citation.epage	1053	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000184273400017	-
dc.citation.woscount	10	-
顯示於類別：	期刊論文

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