High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs
| dc.citation.epage | 1053 | en_US |
| dc.citation.issue | 14 | en_US |
| dc.citation.spage | 1051 | en_US |
| dc.citation.volume | 39 | en_US |
| dc.citation.woscount | 10 | |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Chang, YS | en_US |
| dc.contributor.author | Lai, FY | en_US |
| dc.contributor.author | Hsueh, TH | en_US |
| dc.contributor.author | Laih, LH | en_US |
| dc.contributor.author | Wang, SC | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:40:38Z | |
| dc.date.available | 2014-12-08T15:40:38Z | |
| dc.date.issued | 2003-07-10 | en_US |
| dc.description.abstract | High performance 850 um InGaAsP/InGaP strain-compensated vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25 to 85degreesC. | en_US |
| dc.identifier.doi | 10.1049/el:20030672 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:20030672 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27719 | |
| dc.identifier.wosnumber | WOS:000184273400017 | |
| dc.language.iso | en_US | en_US |
| dc.title | High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs | en_US |
| dc.type | Article | en_US |