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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Kuo, Hao-ChungEnd date: 2019

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Now showing 1 - 10 of 567
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    Dependence of operating conditions on lifetime of Phosphor Quantum dots-based white LEDs
    (2019-01-01)
    Singh, Preetpal
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    Tan, Cher Ming
    ;
    Kuo, Hao-Chung
    ;
    Wang, Kai
    ;
    Yang, Hongchen
    Lifetime of packaged Phosphor- Quantum dot (QDs) based white LEDs is studied. Various stress parameters such as blue light luminance, temperature and moisture are considered and their effect on the performance of the Phosphor- QD based LED is investigated. The lumen degradation rate and degradation trend for LEDs is observed to be different under varying stress conditions. Lumen recovery process is also observed under light stress test.
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    The Luminescent Down Shifting Effect of Single-Junction GaAs Solar Cell with Perovskite Quantum Dots
    (2019-01-01)
    Cho, Yu-Yun
    ;
    Huang, Yu -Ming
    ;
    Hsu, Shun-Chieh
    ;
    Kao, Sheng-Feng
    ;
    Shih, Hsiang-Yun
    In this work, we demonstrate the Luminescent Down Shifting (LDS) effect of the single-junction GaAs solar cell with 514 nm Perovskite quantum dots with and without bake treatment. One of results shows that Jsc from 22.22 mA/cm(2) to 23.38 mA/cm(2) and the efficiency from 17.70% to 18.96% as high as 5.22% and 7.12% enhancement. The enhancement includes antireflection and LDS effect, via our calculated the increase J. from LDS effect was 31.65% Further storage lifetime test shows great reliability from these devices can be expected.
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    Feasibility Study for Double Luminescent Down-shifting Effect in A Dual Junction Solar Cell
    (2019-01-01)
    Huang, Yu-Ming
    ;
    Cho, Yu-Yun
    ;
    Hsu, Shun-Chieh
    ;
    Kao, Sheng-Feng
    ;
    Shih, Hsiang-Yun
    In this work, we discuss the feasibility of two color photons for boosting up the short-circuit current and power conversion efficiency in tandem solar cell. One of them is by luminescent down-shifting (LDS) effect, and the other one is the infrared light emitting diode at 820nm. The CdZnSeS/ZnS quantum dots are used in this study. It can convert ultra-violet photons to visible ones which could be efficiently transformed into electron-hole pairs. The infrared-radiation LED can increase photo-generated carriers of the bottom GaAs solar cell. Finally, short-circuit current would significantly increase from 10.46 mA/cm(2) to 13.81 mA/cm(2), and power conversion efficiency increase from 19.89 to 25.22%. This result shows the possible double-LDS effect for solar cell enhancement in the future.
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    HIT Solar Cell Performance Enhancement with Luminescent Down Shifting Phenomenon
    (2018-01-01)
    Lin, Albert
    ;
    Huang, Chien-Yao
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    Parashar, Parag
    ;
    Chou, Hao-Ming
    ;
    Lin, Yi-Shiuan
    Luminescent down-shifting (LDS) phenomenon has been employed to enhance the HIT solar cell efficiency. The efficiency and J(SC) are increased by 2.3% and 11.5% respectively. External quantum efficiency (EQE) data supports our claim.
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    Using Planar Hyperbolic Metamaterials to Enhance Spontaneous Emission in Two-dimensional Transition Metal Dichalcogenides
    (2018-01-01)
    Lin, Chen-An
    ;
    Yu, Cheng-Li
    ;
    Lin, Hsiang-Ting
    ;
    Chang, Chiao-Yun
    ;
    Kuo, Hao-Chung
    We designed one-dimensional planar hyperbolic metamaterials (P-HMMs) which supported high k modes and had better coupling compared to multilayers HMMs. Therefore, spontaneous emission enhancement and the strong coupling between P-HMMs and 2D materials were achieved.
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    Mode-switching phenomena in periodic InGaN-based hexagon microcavity array
    (2018-01-01)
    Huang, Chia-Yen
    ;
    Dai, Tzu-Ying
    ;
    Lin, Jing-Jie
    ;
    Chang, Tsu-Chi
    ;
    Liu, Che-Yu
    The lasing behavior of InGaN-based microcavity array was strongly relevant to the excitation area. The stronger rod-to-rod optical interaction between the fundamental axial mode resulted its dominance in the collective lasing behavior.
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    All Inorganic Perovskite Quantum Dots Hybrid Green Light-Emitting Diode with Stable Performance
    (2018-01-01)
    Yu, Chung-Ping
    ;
    Chung, Meng-Ting
    ;
    Chen, Tzu-Yu
    ;
    Huang, Yu-Ming
    ;
    Huang, Chung-Ping
    A silica-coated inorganic perovskite quantum dot hybrid light-emitting diodes is aged continuously in high and low light intensity conditions. Both blue and ultra-violet-pumped samples showed stable performances up to 104 hours.
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    850/940-nm VCSEL for optical communication and 3D sensing
    (2018-01-01)
    Cheng, Chih-Hsien
    ;
    Shen, Chih-Chiang
    ;
    Kao, Hsuan-Yun
    ;
    Hsieh, Dan-Hua
    ;
    Wang, Huai-Yung
    This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.
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    An Investigation on Stable and Continuous Operation of Hybrid Perovskite Quantum Dot Light Emitting Diodes
    (2019-01-01)
    Cho, Yu-Yun
    ;
    Hsu, Shun-Chieh
    ;
    Huang, Yu-Ming
    ;
    Shih, Hsiang-Yun
    ;
    Lee, Ting-Yu
    Two different package structures of hybrid perovskite quantum dots light emitting diodes were demonstrated with stable and continuous light emission. With boron nitride nanoparticles, the lifetime of device is expected to be thousands of hours.
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    Simulation Model of Oxide-Aperture Strain Quantum Well VCSEL
    (2019-01-01)
    Shih, Hsiang-Yun
    ;
    Cho, Yu-Yun
    ;
    Hsu, Shun-Chieh
    ;
    Huang, Yu-Ming
    ;
    Wang, Shou-Wei
    An oxide aperture strained quantum well VCSEL model was built based on measured results. The indium composition of MQW was changed to maximize the frequency response. The simulation result shows that the bandwidth can be improved and reach 30.88GHz.