<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

2003 - 20057

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Li, MFHas files: No

Search Results

Now showing 1 - 7 of 7
  • Thumbnail Image
    Item type:Item,
    RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
    (2003)
    Chin, A
    ;
    Chan, KT
    ;
    Huang, CH
    ;
    Chen, C
    ;
    Liang, V
    High quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates.
  • Thumbnail Image
    Item type:Item,
    Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs
    (2003)
    Huang, CH
    ;
    Yu, DS
    ;
    Chin, A
    ;
    Wu, CH
    ;
    Chen, WJ
    We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO2/Si and Al2O3/Ge-On-Insulator (GOI) MOSFETs (EOT = 1.7nm). In additional to the comparable gate current and time-to-breakdown with AI gate C-MOSFETs, the fully NiSi and NiGe gates on SiO2/Si show mobility close to universal mobility while on Al2O3/GOI show similar to2.0X higher peak electron and hole mobility than Al on Al2O3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.
  • Thumbnail Image
    Item type:Item,
    High density RF MIM capacitors using high-kappa AlTaOx dielectrics
    (2003)
    Huang, CH
    ;
    Yang, MY
    ;
    Chin, A
    ;
    Zhu, CX
    ;
    Li, MF
    Very high capacitance density of 10 fF/mum(2) is measured using high-kappa AlTaOx, with small capacitance reduction of 5% from 10 KHz to 30 GHz, low loss tangent < 0.03, and process compatible with existing VLSI back-end integration. Small voltage dependence of capacitance < 600 ppm, mathematical derived from S-parameters, is obtained at 1 GHz, which ensures this MIM capacitor useful for high precision circuits operated at RF regime.
  • Thumbnail Image
    Item type:Item,
    Microwave coplanar filters on Si substrates
    (2003)
    Chan, KT
    ;
    Chin, A
    ;
    Kuo, JT
    ;
    Chang, CY
    ;
    Duh, DS
    High performance band-pass and band-stop microwave coplanar filters operating from 22 to 94 GHz have been realized on Si substrate using proton implantation process. Very good insertion loss and filter characteristics close to ideal E-M simulation are. measured that demonstrates the excellent filter performance to 91 GHz.
  • Thumbnail Image
    Item type:Item,
    High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnology
    (2004)
    Chin, A
    ;
    Kao, HL
    ;
    Yu, DS
    ;
    Liao, CC
    ;
    Zhu, C
    We propose and demonstrate a new VLSI structure using high performance metal-gate/high-kappa MOSFETs and high-Q RF passive devices on Ge-on- Insulator (GOI) platform. In additional to high RF performance passive devices on insulating Si formed by ion implantation. the metal-gate/(La)AiO(3)/GOI MOSFETs have 1.7-2.0X improved electron and hole mobility with the merits of minimizing interfacial reaction., high-kappa crystallization, Fermi-level pinning, and impurity diffusion due to low thermal budget of 500 degrees C RTA.
  • Thumbnail Image
    Item type:Item,
    Strain-induced very low noise RF MOSFETs on flexible plastic substrate
    (2005)
    Kao, HL
    ;
    Chin, A
    ;
    Hung, BF
    ;
    Lai, JM
    ;
    Lee, CF
    Using microstrip line design to screen substrate resistance generated RF noise, very low 1.1 dB min. noise figure (NFmin) and high 12 dB associate gain are measured at 10 GHz of 0.18 mu m MOSFET on plastic without de-embedding. The die on plastic was thinned to 30 mu m that allows applying uniaxial strain to further lower the 10 GHz NFmin to only 0.92 dB and comparable well with the 0.13 mu m and 90nm nodes MOSFETs.
  • Thumbnail Image
    Item type:Item,
    Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference
    (2005)
    Yu, DS
    ;
    Chin, A
    ;
    Wu, CH
    ;
    Li, MF
    ;
    Zhu, C
    Metallic diffusion through high-K HfO(2), caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (phi(m,eff)) of 4.25 and 5.15 eV are obtained in TaTb(0.2)N/HfAlON and Ir/HfAlON at 1.7nm EOT. Good dual phi(m,eff) of 4.15 and 4.9 eV are also obtained in Yb(x)Si/HfAlON and Ir(x)Si/HfAlON FUSI-gates by reduced metal diffusion at lower temperature.