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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Li, MFSubject: search.filters.subject.HfO2

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Now showing 1 - 3 of 3
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    PVD HfO2 for high-precision MIM capacitor applications
    (2003-06-01)
    Kim, SJ
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    Cho, BJ
    ;
    Li, MF
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    Yu, XF
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    Zhu, CX
    Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/mum(2) have been achieved while maintaining the leakage current densities around 1 x 10(-8) A/cm(2) within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.
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    Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors
    (2003-07-01)
    Kim, SJ
    ;
    Cho, BJ
    ;
    Li, MF
    ;
    Zhu, CX
    ;
    Chin, A
    A high-density metal-insulator-metal (MIM) capacitor with a lanthanide-doped HfO2 dielectric prepared by physical vapor deposition (PVD) is presented for the first time. A significant improvement was shown in both the voltage coefficient of capacitance (VCC) and the leakage current density of MIM capacitor, yet the high capacitance density of HfO2 dielectrics was maintained by achieving the doping of Tb with an optimum concentration in HfO2. This technique allows utilizing thinner dielectric film in MIM capacitors and achieving a capacitance density as high as 13.3 fF/mum(2) with leakage current and VCC values that fully meet requirements from year 2005 for radio frequency (RF) bypass capacitors applications.
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    A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation
    (2004-09-01)
    Wu, N
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    Zhang, QC
    ;
    Zhu, CX
    ;
    Chan, DSH
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    Du, AY
    In this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 surface annealing prior to HfO2 deposition. By using SiH4 passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO2 Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a similar to 140% higher peak mobility than that of the device with surface nitridation.