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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Lin, Chien-ChungSubject: search.filters.subject.GaAs

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Now showing 1 - 7 of 7
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    The Luminescent Down Shifting Effect of Single-Junction GaAs Solar Cell with Perovskite Quantum Dots
    (2019-01-01)
    Cho, Yu-Yun
    ;
    Huang, Yu -Ming
    ;
    Hsu, Shun-Chieh
    ;
    Kao, Sheng-Feng
    ;
    Shih, Hsiang-Yun
    In this work, we demonstrate the Luminescent Down Shifting (LDS) effect of the single-junction GaAs solar cell with 514 nm Perovskite quantum dots with and without bake treatment. One of results shows that Jsc from 22.22 mA/cm(2) to 23.38 mA/cm(2) and the efficiency from 17.70% to 18.96% as high as 5.22% and 7.12% enhancement. The enhancement includes antireflection and LDS effect, via our calculated the increase J. from LDS effect was 31.65% Further storage lifetime test shows great reliability from these devices can be expected.
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    Feasibility Study for Double Luminescent Down-shifting Effect in A Dual Junction Solar Cell
    (2019-01-01)
    Huang, Yu-Ming
    ;
    Cho, Yu-Yun
    ;
    Hsu, Shun-Chieh
    ;
    Kao, Sheng-Feng
    ;
    Shih, Hsiang-Yun
    In this work, we discuss the feasibility of two color photons for boosting up the short-circuit current and power conversion efficiency in tandem solar cell. One of them is by luminescent down-shifting (LDS) effect, and the other one is the infrared light emitting diode at 820nm. The CdZnSeS/ZnS quantum dots are used in this study. It can convert ultra-violet photons to visible ones which could be efficiently transformed into electron-hole pairs. The infrared-radiation LED can increase photo-generated carriers of the bottom GaAs solar cell. Finally, short-circuit current would significantly increase from 10.46 mA/cm(2) to 13.81 mA/cm(2), and power conversion efficiency increase from 19.89 to 25.22%. This result shows the possible double-LDS effect for solar cell enhancement in the future.
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    Numerical Evaluation on the Nano-rod Array on a N-side-up Thin-film GaAs Solar Cells
    (2017-01-01)
    Lin, Yan-Zhang
    ;
    Hsu, Shun-Chieh
    ;
    Wu, Po-Ching
    ;
    Hsu, Chia-Jhe
    ;
    Lin, Chien-Chung
    In this work, we demonstrate the influence of the substrate thickness and the arrangement of nano-rod arrays on the n-side up GaAs thin film solar cell. The J-V characteristics can be altered significantly with different design parameters. The thickness of the substrate can have strong influence on the collected carrier. Also the closeness of the rod to each other can affect the short-circuit current as well due to the limited penetration depth of the photons.
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    The Analysis of Dual-Junction Tandem Solar Cells Enhanced by Surface Dispensed Quantum Dots
    (2018-09-01)
    Hsu, Shun-Chieh
    ;
    Huang, Yu-Ming
    ;
    Kao, Yu-Cheng
    ;
    Kuo, Hao-Chung
    ;
    Horng, Ray-Hua
    The luminescent down-shifting (LDS) effect of a colloidal quantum dot layer on a dual junction solar cell is explored and analyzed. A 5.47% enhancement of power conversion efficiency is recorded when green quantum dots are dispersed on device surface. The surface reflectance spectra before and after the quantum dot dispenses are necessary to decouple the different mechanisms between antireflective and LDS effects. A further deduction of formulation on the dual-junction device with antireflection and LDS effect is presented and as high as 44.6% of short-circuit current increase in the green quantum dot case can be attributed to the LDS effect according to our calculation.
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    Colloidal Quantum Dot Enhanced Dual-Junction Tandem Solar Cells
    (2016-01-01)
    Hsu, Shun-Chieh
    ;
    Kao, Yu-Cheng
    ;
    Han, Hau-Vei
    ;
    Kuo, Hao-Chung
    ;
    Horng, Ray-Hua
    In this work, we demonstrate the the enhancement of two type hybrid QD dual-junction solar cell. The green QD520 sample, shows better performance than blue QD450 sample in current density and power conversion efficiency. The enhancement of short-circuit current and power conversion efficiency for green QD450 sample are 4.43% and 3.77% and the blue QD520 samples are 9.44% and 5.78%. For short wavelength, the enhancement can mainly be attributed to the photon downshift effect and antireflection, for long wavelength, it only the antireflection effect.
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    Numerical Study on Doping and Positioning Effect of Type-II GaSb/GaAs Quantum Ring Layer on Solar Cell Performances
    (2016-01-01)
    Wu, Po-Ching
    ;
    Hsu, Shun-Chieh
    ;
    Jhen, Yun-Han
    ;
    Dong, Yao-Zhong
    ;
    Ling, Yan-Zhang
    In this work, we demonstrate the doping concentration and positioning effect of the type-II quantum well (QR) on the solar cell performances in terms of numerical simulation. The variation in doping concentration and location can affect the band diagram seriously and possibly form the back surface field which can either facilitate or deteriorate the carrier collection. A wide range of parameters are calculated to reveal this trend and the previous experimental results are also discussed.
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    Positioning Effect of Type-II GaSb/GaAs Quantum Ring Layer on Solar Cell Performances
    (2015)
    Hsu, Shun-Chieh
    ;
    Chen, Yin-Han
    ;
    Chen, Hsuan-An
    ;
    Lin, Shih-Yen
    ;
    Shen, Tien-Lin
    In this work, we demonstrate the positioning effect of the type-II quantum ring (QR) on the solar cell efficiencies. The QR layer was placed in either p-type or n-type region to test its effect on the performance. Under one Sun condition, the one with p-type QR layer has better efficiency and open-circuit voltage. But this advantage loses quickly when the sunlight is concentrated over 20 times. From the concentrated sunlight measurement, the sample with QR layer in the n-type region can sustain the V-oc reduction until 80 Suns.