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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Lin, Horng-ChihSubject: search.filters.subject.strain

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Now showing 1 - 3 of 3
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    Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime
    (2020-03-01)
    Kuo, Yu-Hong
    ;
    Chiu, Shih-Hsuan
    ;
    Tien, Che-Wei
    ;
    Lin, Sheng-Di
    ;
    Chang, Wen-Hao
    We report local nitride-stressor engineering in combination with quantum-size tunability in Ge quantum dots (QDs) for tailoring photoluminescence (PL) wavelength and exciton lifetime. Spherical-shaped Ge QDs with tunable diameters ranging from 25-90 nm embedded within layers of thermally-grown SiO2 and chemical-vapor-deposited Si3N4 were fabricated by thermal oxidation of lithographically-patterned poly-Si0.85Ge0.15 pillars on top of buffer layers of SiO2 and Si3N4, respectively, in a self-organization approach. The effects of local stressors and quantum confinement on the strain and optical properties of Ge QDs were systematically investigated using Raman and PL measurements. We observed that when Ge QD diameter gets smaller than 60 nm, quantum confinement sets in and has a predominant influence on PL wavelength and exciton lifetime. Our self-organized Ge QD/Si3N4 system provides a generic building block for the fabrication of active photonic devices on Si3N4 platform.
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    Correlating drain-current with strain-induced mobility in nanoscale strained CMOSFETs
    (2006-08-01)
    Lin, Hong-Nien
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    Chen, Hung-Wei
    ;
    Ko, Chih-Hsin
    ;
    Ge, Chung-Hu
    ;
    Lin, Horng-Chih
    The correlation between channel mobility gain (Delta mu), linear drain-current gain (AIdlin), and saturation draincurrent gain (Delta I-dsat) of nanoscale strained CMOSFETs are reported. From the plots of Delta I-dlin versus Delta I-dsat and ballistic efficiency (B-sat,B-PSS), the ratio of source/drain parasitic resistance (R-sat,R-PSS) to channel resistance (R-CH,R-PSS) of strained CMOSFETs can be extracted. By plotting Delta mu versus Delta I-dlin, the efficiency of Delta mu translated to Delta I-dlin is higher for strained pMOSFETs than strained nMOSFETs due to smaller R-SD,R-PSS-to-R-CH,R-PSS ratio of strained pMOSFETs. It suggests that to exploit strain benefits fully, the R-SD,R-PSS reduction for strained nMOSFETs is vital, while for strained pMOSFETs the Delta I-dli -to-Delta mu sensitivity is maintained until R-SD,R-PSS becomes comparable to/or higher than R-CH,R-PSS.
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    Characterizing the channel backscattering behavior in nanoscale strained complementary metal oxide semiconductor field-effect transistors
    (2006-11-01)
    Lin, Hono-Nien
    ;
    Chen, Hung-Wei
    ;
    Ko, Chih-Hsin
    ;
    Ge, Chung-Hu
    ;
    Lin, Horng-Chih
    This work investigates the impact of different uniaxial strain polarities on channel backscattering in nanoscale complementary metal oxide semiconductor field-effect transistor (CMOSFET). Two carrier statistics, nondegenerate and degenerate-limited, are employed to extract the channel backscattering ratio, ballistic efficiency, and related backscattering factors. While the channel length scales down and the channel stress level increases further, the modulation of channel backscattering ratio, i.e., improved (degraded) by uniaxial tensile (compressive) strain, becomes more prominent. This observation holds true under both carrier statistics, which implies that the nondegenerate case with simple mathematics can be fairly used for evaluation. In addition, the correlation between strain-enhanced mobility gain and drain current improvement is found to be predicted well by the ballistic efficiency deduced with the nondegenerate carrier statistics.