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Annealing effects on resistive switching of IGZO-based CBRAM devices
(2020-10-01)
Gan, Kai-Jhih
;
Liu, Po-Tsun
;
Ruan, Dun-Bao
;
Chiu, Yu-Chuan
;
Sze, Simon M.
In this study, the impact of post-oxide deposition annealing on performance of IGZO-based conductive-bridging random access memory (CBRAM) is reported. It is found that besides the distinct reduction in resistive switching parameters of SET/RESET voltages, their dispersions, and the resistance ratio of high-resistance state to low-resistance state can be improved after N-2 annealing. The annealing effects on enhancing of the resistive switching properties are investigated by x-ray photoelectron spectra. It can be considered that the formation of the filament is better controlled by the increase of oxygen vacancies in the switching layer, which is the main reason for the improvement of resistive switching characteristics.
High Performance Transparent a-IGZO Thin Film Transistors With ALD-HfO2 Gate Insulator on Colorless Polyimide Substrate
(2020-01-01)
Yu, Min-Chin
;
Ruan, Dun-Bao
;
Liu, Po-Tsun
;
Chien, Ta-Chun
;
Chiu, Yu-Chuan
High performance and transparent amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFT) have been successfully fabricated on the colorless polyimide plastic substrate using a high quality HfO2 dielectric film formed by the low temperature atomic layer deposition process as the gate insulator. Besides, the effects of source/drain material, ITO film and Mo metal, are also studied and compared in this work. With the optimized process condition, the devices with ITO source/drain exhibit a high I-ON/I-OFF current ratio of similar to 4.25 x 10(11), a lower sub-threshold swing value of 0.087 V/decade, a desirable positive threshold voltage value of 0.1379 V and an acceptable field effect mobility of 19.69 cm(2)/Vs. while it also shows excellent reliability characteristic and low hysteresis. These results may appear highly promising potentials for the next generation fully transparent flexible display application.
High-reliability gate driver on array using noise sharing of precharging node for thin film transistor-liquid crystal display application
(1970-01-01)
Zheng, Guang-Ting
;
Liu, Po-Tsun
;
Du, Chia-Heng
;
Wang, Teng-Yu
;
顯示科技研究所
A hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) gate driver with negative bias stress on precharging node for noise sharing with high-reliability 10.7-in. automotive display has been proposed. The proposed circuit is composed of precharging block, pull-up and pull-down block, and noise-free block. The precharging block not only starts up the gate driver but also reduces noise with 33% duty cycle. Duplicate output signals are responsible for turning on next stage to decrease the loading of output of gate line. Moreover, negative bias voltage recovering of TFTs could be created by setting another lower voltage source to lower the threshold voltage degradation of TFTs. According to lifetime test results, the proposed gate driver of 708 stages passes the extreme temperature range test (90 degrees C and -40 degrees C) for simulation and -40 degrees C for measurement and remains stable over 800 h at 90 degrees C test. Finally, this design is successfully demonstrated in a 10.7-in. HD (1280 x RGB x 720) TFT-LCD panel.
Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory
(1970-01-01)
Gan, Kai-Jhih
;
Liu, Po-Tsun
;
Ruan, Dun-Bao
;
Hsu, Chih-Chieh
;
Chiu, Yu-Chuan
The effect of annealing on the performance of conductive-bridging random-access memory (CBRAM) with an amorphous gallium oxide (a-Ga2O3) switching layer has been studied. After annealing at 200 degrees C in N-2, a significant improvement of the bipolar resistive switching characteristics was observed. The a-Ga2O3 CBRAM showed good memory performance, with high switching endurance (up to 7.5 x 10(2) cycles) and high thermal stability. The resistive switching stability and electrical uniformity were also obviously improved. The memory window remained above 10(5) over 7.5 x 10(2) endurance cycles at 85 degrees C. Material characterization by x-ray photoelectron spectroscopy suggested that the improved uniformity of the resistive switching in the N-2-annealed Ga2O3 films may result from a higher density of oxygen vacancies. These results indicate great potential for such devices in future high-density nonvolatile memory applications.
Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology
(2020-05-04)
Ruan, Dun-Bao
;
Liu, Po-Tsun
;
Gan, Kai-Jhih
;
Chiu, Yu-Chuan
;
Hsu, Chih-Chieh
The effects of radiation on tungsten doped indium oxide (IWO) thin-film transistors (TFTs) have been well investigated in this Letter. In order to achieve high stability and excellent electrical performance simultaneously even in high ionizing radiation damage ambient, different concentrations of tungsten dopant have been introduced for the TFT device fabrication. It is interesting that the high energy ionizing radiation may significantly increase the conductivity and influence the total concentration of oxygen vacancy in the transparent amorphous oxide semiconductor material, which may be completely different from the traditional radiation damage effect for silicon based CMOS devices. However, that abnormal phenomenon will be effectively suppressed by the powerful carrier suppressor, tungsten, which may have a high oxygen bond dissociation energy. Therefore, IWO devices with a 4% tungsten oxide dopant might be the optimized result even after high dosage ionizing radiation exposure. Hence, it may provide a promising radiation hardness approach to improve both the electrical characteristics and reliability for next generation displays, which can be used in the control system of nuclear power generation or space technology.
Investigation of resistive switching in copper/InGaZnO/Al2O3-based memristor
(2019-09-30)
Gan, Kai-Jhih
;
Chang, Wei-Chiao
;
Liu, Po-Tsun
;
Sze, Simon M.
;
電子工程學系及電子研究所
This work investigates the resistive switching mechanism in the Cu/TiW/InGaZnO/Al2O3/Pt-based memristor. By introducing the Al2O3 layer, the nanoscale diameter of the Cu filament decreased from 6.51 to 0.83 nm as the current compliance decreases from 1 mA to 50 mu A. The resistive switching memory characteristics, such as a large ratio of high-resistance state (HRS)/low-resistance state (LRS) (similar to 10(7)), stable switching cycle stability (>9 x 10(2)), and multilevel operation, are observed and apparently improved compared to the counterpart of the Cu/TiW/InGaZnO/Pt memory device. These results are attributed to the control of Cu formation/dissolution by introducing the Al2O3 nanolayer at the InGaZnO/Pt interface. The findings of this study can not only improve the performance of the amorphous InGaZnO memristor but also be promising for potential applications of next-generation flat-panel displays in wearable devices.
Highly durable and flexible gallium-based oxide conductive-bridging random access memory
(2019-10-02)
Gan, Kai-Jhih
;
Liu, Po-Tsun
;
Chien, Ta-Chun
;
Ruan, Dun-Bao
;
Sze, Simon M.
The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga2O3/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>10(5)), low operation voltage, high endurance (>1.4 x 10(2) cycles), and large retention memory window (>10(5)). The temperature coefficient of resistance in the filament confirms that the conduction mechanism observed in the Ga2O3 layer is similar with the phenomenon of electrochemical metallization (ECM). Moreover, the performance of CBRAM device will not be impacted during the flexibility test. Considering the excellent performance of the CBRAM device fabricated by low-temperature process, it may provide a promising potential for the applications of flexible integrated electronic circuits.
Bipolar resistive switching characteristics of tungsten-doped indium-zinc oxide conductive-bridging random access memory
(2019-08-01)
Gan, Kai-Jhih
;
Liu, Po-Tsun
;
Lin, Sheng-Jie
;
Ruan, Dun-Bao
;
Chien, Ta-Chun
The purpose of this work is to develop a reliable amorphous tungsten-doped indium-zinc oxide based conductive-bridging random access memory (CBRAM). The device with Cu/TiW/InWZnO/Pt structure exhibits stable bipolar resistive switching behavior. The device also shows good non-volatile memory characteristics, such as low operation voltage, on/off resistance ratio (similar to 10(2)), high switching endurance (more than 5 x 10(2) cycles). The temperature coefficient of resistance in the conductive filament confirms that an electro-chemical metallization (ECM) based conduction is observed in the InWZnO device. Furthermore, the temperature retention characteristics and the current transport mechanisms are also investigated. According to our experiments, we propose a model to explain the resistive switching phenomenon observed in our devices. These results have given a great potential for the transparent amorphous oxide semiconductor (TAOS)-based material utilizing in CBRAM stacks and integrating into the display circuits for future memory-in-pixel applications.
Two-Dimensional-Like Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Low Operation Voltage
(2019-05-20)
Kuo, Po-Yi
;
Chang, Chien-Min
;
Liu, I-Han
;
Liu, Po-Tsun
;
光電工程學系
In this work, we have successfully demonstrated the junctionless (JL) transistors with two-dimensional-like (2D-like) nano-sheet (NS) material, amorphous indium tungsten oxide (a-IWO), as an active channel layer. The influences of the different gate insulator (GI) materials and the scalings of GI thickness, a-IWO channel thickness, and channel lengths on the a-IWO NS JL transistors (a-IWO NS-JLTs) have been studied for the purposes of low operation voltage (gate voltage <= 2V) and high performance. The 2D-like a-IWO NS-JLTs exhibit low operation voltage, low source/drain (S/D) contact resistance (R-c) and other key electrical characteristics, such as high field-effect mobility (mu(FE)), near ideal subthreshold swing (S.S.), and large ON/OFF currents ratio (I-ON/I-OFF) The remarkable device characteristics also make the proposed 2D-like a-IWO NS-JLTs promising for system-on-panel (SoP) and vertically stacked (VS) hybrid CMOS applications.
Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems
(2019-06-26)
Ruan, Dun-Bao
;
Liu, Po-Tsun
;
Yu, Min-Chin
;
Chien, Ta-Chun
;
Chiu, Yu-Chuan
In this study, hydrogen peroxide (H2O2) cosolvent, which was dissolved into supercritical-phase carbon dioxide fluid (SCCO2), is employed to passivate excessive oxygen vacancies of the high-mobility tungsten-doped indium oxide without any essential thermal process. With the detailed material analysis, the internal physical mechanism of the cosolvent effect or the interaction between the cosolvent solution and supercritical-phase fluid is well discussed. In addition, the optimized result has been applied for the thin film transistor device fabrication. As a result, the device with SCCO2 + H2O2 treatment exhibits the lowest subthreshold swing of 82 mV/dec, the lowest interface trap density of 8.76 x 10(11) eV(-1) cm(-2), the lowest hysteresis of 47 mV, and an excellent reliability and uniformity characteristic compared with any other control groups. Besides, an extremely high field-effect mobility of 98.91 cm(2)/V s can also be observed, while there is even a desirable positive shift for the threshold voltage. Notably, compared with the untreated sample, the highest on/off current ratio of 5.11 x 10(7) can be achieved with at least four orders of magnitude enhancement by this unique treatment.

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