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Item type:Item, ESD Protection Design for Wideband RF Applications in 65-nm CMOS Process(2014) ;Chu, Li-Wei ;Lin, Chun-Yu ;Ker, Ming-Dou ;Song, Ming-HsiangTseng, Jen-ChouAll wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.Item type:Item, Improving ESD Robustness of Stacked Diodes with Embedded SCR for RF Applications in 65-nm CMOS(2014) ;Lin, Chun-Yu ;Fan, Mei-Lian ;Ker, Ming-Dou ;Chu, Li-WeiTseng, Jen-ChouTo protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.