<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css"> Skip to main content

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作,涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Search Results

Now showing 1 - 2 of 2
  • Item type:Item,
    ESD Protection Design for Wideband RF Applications in 65-nm CMOS Process
    (2014)
    Chu, Li-Wei
    ;
    Lin, Chun-Yu
    ;
    Ker, Ming-Dou
    ;
    Song, Ming-Hsiang
    ;
    Tseng, Jen-Chou
    All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.
  • Item type:Item,
    Improving ESD Robustness of Stacked Diodes with Embedded SCR for RF Applications in 65-nm CMOS
    (2014)
    Lin, Chun-Yu
    ;
    Fan, Mei-Lian
    ;
    Ker, Ming-Dou
    ;
    Chu, Li-Wei
    ;
    Tseng, Jen-Chou
    To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.