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Author: search.filters.author.Su, PinSubject: search.filters.subject.low-frequency noise

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    A Comprehensive Investigation of Analog Performance for Uniaxial Strained PMOSFETs
    (2009-02-01)
    Kuo, Jack Jyun-Yan
    ;
    Chen, William Po-Nien
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This paper presents a comprehensive investigation of the analog performance for uniaxial strained PMOSFETs with sub-100 nm gate length. Through a comparison between co-processed strained and unstrained devices regarding important analog metrics such as transconductance to drain current ratio (g(m)/I(d)), dc gain, linearity, low-frequency noise, and device mismatch, the impact of process-induced uniaxial strain on the analog performance of MOS devices has been assessed and analyzed. Our results indicate that, although the drain current noise spectral density and drain current mismatch of the strained device under low gate voltage overdrive are increased because of the larger gate-bias sensitivity of carrier mobility, the strained device has almost the same low frequency and mismatch performance as the unstrained one at a given g(m)/I(d). This paper may provide insights for analog design using advanced strained devices.
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    Impact of Uniaxial Strain on Low-Frequency Noise in Nanoscale PMOSFETs
    (2009-06-01)
    Kuo, Jack J. -Y.
    ;
    Chen, William P. -N.
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This letter investigates the low-frequency noise characteristics and reports a new mechanism for uniaxial strained PMOSFETs. Through a comparison of the input-referred noise and the trap density of the gate dielectric/semiconductor interface between co-processed strained and unstrained devices, it is found that the tunneling attenuation length for channel carriers penetrating into the gate dielectric is reduced by uniaxial strain. The reduced tunneling attenuation length may result in smaller input-referred noise, which represents an intrinsic advantage of low-frequency noise performance stemming from process-induced strain.
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    Enhanced Carrier-Mobility-Fluctuation Origin Low-Frequency Noise in Uniaxial Strained PMOSFETs
    (2010-05-01)
    Kuo, Jack J. -Y.
    ;
    Chen, William P. -N.
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (V(gst)) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility- fluctuation origin 1/f noise for the strained device in the high-vertical bar V(gst)vertical bar regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low-frequency noise.