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Annealing effects on resistive switching of IGZO-based CBRAM devices
(2020-10-01)
Gan, Kai-Jhih
;
Liu, Po-Tsun
;
Ruan, Dun-Bao
;
Chiu, Yu-Chuan
;
Sze, Simon M.
In this study, the impact of post-oxide deposition annealing on performance of IGZO-based conductive-bridging random access memory (CBRAM) is reported. It is found that besides the distinct reduction in resistive switching parameters of SET/RESET voltages, their dispersions, and the resistance ratio of high-resistance state to low-resistance state can be improved after N-2 annealing. The annealing effects on enhancing of the resistive switching properties are investigated by x-ray photoelectron spectra. It can be considered that the formation of the filament is better controlled by the increase of oxygen vacancies in the switching layer, which is the main reason for the improvement of resistive switching characteristics.
High Performance Transparent a-IGZO Thin Film Transistors With ALD-HfO2 Gate Insulator on Colorless Polyimide Substrate
(2020-01-01)
Yu, Min-Chin
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Ruan, Dun-Bao
;
Liu, Po-Tsun
;
Chien, Ta-Chun
;
Chiu, Yu-Chuan
High performance and transparent amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFT) have been successfully fabricated on the colorless polyimide plastic substrate using a high quality HfO2 dielectric film formed by the low temperature atomic layer deposition process as the gate insulator. Besides, the effects of source/drain material, ITO film and Mo metal, are also studied and compared in this work. With the optimized process condition, the devices with ITO source/drain exhibit a high I-ON/I-OFF current ratio of similar to 4.25 x 10(11), a lower sub-threshold swing value of 0.087 V/decade, a desirable positive threshold voltage value of 0.1379 V and an acceptable field effect mobility of 19.69 cm(2)/Vs. while it also shows excellent reliability characteristic and low hysteresis. These results may appear highly promising potentials for the next generation fully transparent flexible display application.
Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM
(2020-09-23)
Lin, Shih-Kai
;
Wu, Cheng-Hsien
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Chen, Min-Chen
;
Chang, Ting-Chang
;
Lien, Chen-Hsin
This study examines the influence of different electrode thermal conductivity on switching behavior during the reset process. Electrical analysis methods and an analysis of current conduction mechanism indicate that better thermal conductivity in the electrode will require larger input power in order to induce more active oxygen ions to take part in the reset process. More active oxygen ions result in a more oxidized switching layer, and cause the effective switching gap (d(sw)) to become larger in the reset process. The effect of the electrode thermal conductivity and input power are explained by our model and clarified by electrical analysis methods.
Incorporation of Resistive Random Access Memory into Low-Temperature Polysilicon Transistor with Fin-Like Structure as 1T1R Device
(1970-01-01)
Huang, Wei-Chen
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Zheng, Hao-Xuan
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Chen, Po-Hsun
;
Chang, Ting-Chang
;
Tan, Yung-Fang
In this study, a one transistor one resistor (1T1R) structure combining a fin-like low-temperature polycrystalline-silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin-like LTPS transistor, both n-type and p-types show excellent electrical output characteristics. Fin-like structure produces more stable output characteristics. Also, the forming and current-voltage (I-V) characteristics are measured in this study, and the RRAM exhibits a forming voltage of about -1.9 V. As for the I-V switching property, the devices are stable and show excellent performance, with the set and reset voltages showing only minimal change over 100 cycles. Moreover, combining the fin-like LTPS transistor and RRAM into a 1T1R structure results in favorable operation over 100 cycles, with excellent retention and endurance. According to these results, RRAM can be successfully combined with a fin-like LTPS transistor for application in current integrated circuit processes without difficulty.
Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory
(1970-01-01)
Gan, Kai-Jhih
;
Liu, Po-Tsun
;
Ruan, Dun-Bao
;
Hsu, Chih-Chieh
;
Chiu, Yu-Chuan
The effect of annealing on the performance of conductive-bridging random-access memory (CBRAM) with an amorphous gallium oxide (a-Ga2O3) switching layer has been studied. After annealing at 200 degrees C in N-2, a significant improvement of the bipolar resistive switching characteristics was observed. The a-Ga2O3 CBRAM showed good memory performance, with high switching endurance (up to 7.5 x 10(2) cycles) and high thermal stability. The resistive switching stability and electrical uniformity were also obviously improved. The memory window remained above 10(5) over 7.5 x 10(2) endurance cycles at 85 degrees C. Material characterization by x-ray photoelectron spectroscopy suggested that the improved uniformity of the resistive switching in the N-2-annealed Ga2O3 films may result from a higher density of oxygen vacancies. These results indicate great potential for such devices in future high-density nonvolatile memory applications.
Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology
(2020-05-04)
Ruan, Dun-Bao
;
Liu, Po-Tsun
;
Gan, Kai-Jhih
;
Chiu, Yu-Chuan
;
Hsu, Chih-Chieh
The effects of radiation on tungsten doped indium oxide (IWO) thin-film transistors (TFTs) have been well investigated in this Letter. In order to achieve high stability and excellent electrical performance simultaneously even in high ionizing radiation damage ambient, different concentrations of tungsten dopant have been introduced for the TFT device fabrication. It is interesting that the high energy ionizing radiation may significantly increase the conductivity and influence the total concentration of oxygen vacancy in the transparent amorphous oxide semiconductor material, which may be completely different from the traditional radiation damage effect for silicon based CMOS devices. However, that abnormal phenomenon will be effectively suppressed by the powerful carrier suppressor, tungsten, which may have a high oxygen bond dissociation energy. Therefore, IWO devices with a 4% tungsten oxide dopant might be the optimized result even after high dosage ionizing radiation exposure. Hence, it may provide a promising radiation hardness approach to improve both the electrical characteristics and reliability for next generation displays, which can be used in the control system of nuclear power generation or space technology.
High-Precision Symmetric Weight Update of Memristor by Gate Voltage Ramping Method for Convolutional Neural Network Accelerator
(2020-03-01)
Chen, Jia
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Pan, Wen-Qian
;
Li, Yi
;
Kuang, Rui
;
He, Yu-Hui
Memristor emerges as the key enabler for neural network accelerator. Here, we demonstrate high-precision symmetric weight update in a one transistor one resistor (1T1R) structure Ti/HfO2/TiN memristor using a gate voltage ramping method, with over 120-level states and low variation (< 4%). Incorporating all experimental non-idealities, the proposed mixed hardware-software convolutional neural network demonstrates over 92.79% online learning accuracy (against software equivalent 98.45%) for MNIST recognition task. The network also shows robustness to input image noises, array yield, and retention issues.
Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing
(2020-03-01)
Wu, Pei-Yu
;
Zheng, Hao-Xuan
;
Shih, Chih-Cheng
;
Chang, Ting-Chang
;
Chen, Wei-Jang
In this experiment, the electrical performance of zinc oxide based-resistive random access memory (RRAM) is successfully improved by using annealing in ammonia hydroxide solution at low-temperature and high pressure to complete ammonium-doped ZnO based-RRAM. The results of material analysis indicate that using CO2 as ammonia hydroxide carrier during the annealing process leads to the reduction in dangling bond density. This can be clearly observed in the decrease in breakdown voltage during the forming process and a lower operating current during operation. Furthermore, in this ammonium-doped ZnO based-RRAM, we study the molecular doping of NH3 in ZnO, where the endurance and retention properties are improved as well. These improvements can be attributed to the higher concentration of nitrogen in the switching layer, which can effectively control the active oxygen ions during the operation process.
In-Memory Digital Comparator Based on a Single Multivalued One-Transistor-One-Resistor Memristor
(2020-03-01)
Cheng, Long
;
Zheng, Hao-Xuan
;
Li, Yi
;
Chang, Ting-Chang
;
Sze, Simon M.
In-memory computing based on multivalued memristive device opens the vision of building computing system with less resource and high performance. In this article, we achieved three distinguishable resistance states in mature one-transistor-one-resistor (1T1R) memristor. Furthermore, based on a single multivalued 1T1R device, for the first time, we successfully demonstrated an area-efficient in-memory digital comparator, which will cost five logic gates in complementary metal oxide semiconductor (CMOS) approach. The method is also easily expanded to multibit. Our work could be a representative of using multivalued nonvolatile memory device in digital information processing with improved performance.
Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory
(2020-02-01)
Zhou, Kuan-Ju
;
Chang, Ting-Chang
;
Lin, Chih-Yang
;
Chen, Chun-Kuei
;
Tseng, Yi-Ting
In this letter, the electrical characteristics of Ti/HfO2/TiN resistive random access memory (RRAM) were thoroughly investigated. An abnormal current degradation was seen in the DC sweeping cycle. Both the on-state and off-state current clearly exhibited degradation with time. Next, current fitting analysis was used to investigate the carrier transport mechanisms. The results indicate that the on-state carrier transport mechanism changed from space-charge-limited current into hopping conduction after cycle sweeping. However, the off-state current changes from Schottky thermal emission to hopping conduction. Based on comparisons of different Schottky distances and Schottky barriers, physical models were proposed to explain the abnormal current degradation behavior. Finally, COMSOL electric field simulations were used to show the electric field distribution around the conducting filament (CF), and the conducting model was subsequently verified.

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