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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Now showing 1 - 10 of 12
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    Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
    (1998-01-01)
    Tsai, MS
    ;
    Sun, SC
    ;
    Tseng, TY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O-2 and N-2 ambients were investigated. The crystallinity was improved after postdeposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O-2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N-2 ambient.
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    Chemical mechanical polishing for selective CVD-W
    (1997-10-30)
    Wang, MT
    ;
    Yeh, WK
    ;
    Tsai, MS
    ;
    Tseng, WT
    ;
    Chang, TC
    This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
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    Effect of bottom electrodes on dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 thin film capacitors
    (1998-11-01)
    Tsai, MS
    ;
    Tseng, TY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 (BST) thin films deposited on various bottom electrodes, such as Pt, Ir, IrO2/Ir, Ru, RuO2/Ru before and after annealing in O-2 ambient was investigated. Through the measurement of dielectric dispersion as a function of frequency (100 Hz less than or equal to f less than or equal to 10 MHz) and temperature (27 degrees C less than or equal to T less than or equal to 150 degrees C), we studied the trapping dielectric relaxation and defect quantity of the films, and proposed an equivalent circuit on the basis of the capacitance, admittance and impedance spectra. A shallow trap level located at 0.005-0.01 eV below the conduction band was observed from the admittance spectral studies in the temperature range of 27-150 degrees C. The origin of dielectric relaxation and defect concentration was attributed to the existence of the grain boundary defect, interface defect and shallow trap level in the films. An equivalent circuit was established which can well explain the AC response and identify the contribution of defects on electrical properties of BST thin film. From the viewpoint of trapping phenomena and dielectric relaxation analyses, we propose Ir as the optimum material for bottom electrode to withstand the post-annealing treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Chemical mechanical polishing for selective CVD-W
    Wang, MT
    ;
    Yeh, WK
    ;
    Tsai, MS
    ;
    Tseng, WT
    ;
    Chang, TC
    This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
  • Thumbnail Image
    Item type:Item,
    Chemical mechanical polishing for selective CVD-W
    Wang, MT
    ;
    Yeh, WK
    ;
    Tsai, MS
    ;
    Tseng, WT
    ;
    Chang, TC
    This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
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    Item type:Item,
    Selective copper metallization by electrochemical contact displacement with amorphous silicon film
    (2001-07-01)
    Lee, YP
    ;
    Tsai, MS
    ;
    Hu, TC
    ;
    Dai, BT
    ;
    Feng, MS
    In this study, we proposed a novel selective Cu metallization method by means of Si chemical mechanical polishing (CMP) and electrochemical Cu contact displacement from a-Si. The galvanic Cu deposition which involves the electrochemical redox reaction between cupric ions and silicon atoms could be carried out at room temperature in the HF aqueous solution. This selective Cu metallization method is promising for overcoming the obstacles in the current damascene process, such as the limitation of depositing comformally Cu seed into high aspect ratio trenches by physical vapor deposition for the following void-free Cu electroplating and nonplanarity issues after multistep CMP, such as Cu dishing and dielectric erosion. (C) 2001 The Electrochemical Society.
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    Item type:Item,
    Pattern effect optimized with non-native surface passivation in copper abrasive-free polishing
    (2005)
    Fang, JY
    ;
    Tsai, MS
    ;
    Dai, BT
    ;
    Wu, YS
    ;
    Feng, MS
    Pattern effects, resulting from different metal removal rates on various feature designs in copper chemical mechanical polishing (Cu CMP), can be reduced in an abrasive-free slurry formulated with HNO3 and benzotriazole (BTA). In the slurry, non-native Cu-BTA adlayer is formed instead of native metal oxide as surface passivation layer on a Cu surface, and it benefits nonlinear Cu removal rate as function of down force. Moreover, by controlling the down force, the Cu removal rate can be independent of down force resulting in the reduction of pattern effect. (C) 2005 The Electrochemical Society.
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    A study on electrochemical metrologies for evaluating the removal selectivity of AlCMP
    (1999)
    Chiu, SY
    ;
    Hsu, JW
    ;
    Tung, IC
    ;
    Shih, HC
    ;
    Feng, MS
    The in-situ electrochemical measurements were performed for the Al and Ti disks in the various slurries under the polishing or static condition. The slurries used contained Al2O3 abrasive, phosphoric acid, citric acid and hydrogen peroxide. The results showed that the addition of H2O2 could help to form an effective passivating layer on the Al surface. Besides, the addition of H2O2 enhanced Al dissolution. The maximum corrosion potential drop between the abraded and non-abraded Al electrodes corresponded to the possible maximum polishing rate of Al. The novel equipment for in-situ galvanic measurements was designed for evaluating the Al/Ti galvanic couple. It was found that Al dissolution could be suppressed in the slurry with the addition of 6 vol% H2O2 at pH 4. As regards the Al/Ti removal selectivity, the polishing with the addition of 6 vol% H2O2 at pH 4 would mitigate the Al dishing, since the polishing and dissolution of Al could be suppressed while those of Ti could be enhanced.
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    Study on chemical-mechanical polishing of low dielectric constant polyimide thin films
    (2000)
    Tai, YL
    ;
    Tsai, MS
    ;
    Tung, IC
    ;
    Dai, BT
    ;
    Feng, MS
    In this study the polyimide CMP was explored for its feasibility on the IMD planarization applications. Polishing polyimide was carried out before its final curing, and the removal rates were found to be strongly dependent upon the imidization degree of polyimide and the hydroxyl activity in the slurry. TMAH, tetra-methyl-ammonium hydroxide, added into the slurry is not only a strong base, but also a wetting agent to improve the surface wettability on the hydrophobic polyimide surface. The surface damages, such as roughness and scratches, moisture uptake and mobile ions contamination of the polished polyimide were characterized for their influence on the insulating properties, like dielectric constant, leakage current, electrical breakdown. It was demonstrated that directly polyimide CMP would not deteriorate the dielectric properties.
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    Impact of airborne molecular contamination to nano-device performance
    (2002)
    Yeh, CF
    ;
    Hsiao, CW
    ;
    Lin, SJ
    ;
    Xie, ZM
    ;
    Kusumi, T
    In this paper, we detected most airborne molecular contamination (AMC) in present cleanroom and in our specially equipped clean bench through air sampling and wafer sampling experiments. And then we investigate the AMC on device performance under different filter modules. We discovered that the NEUROFINE PTFE filter combines with the chemical filters have excellent controlling ability of metal, organic and inorganic contaminations. We believe that the novel filter combination can be used to further improve device manufacturing environment when device is continuously scaled down to nanometer generation.