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Author: search.filters.author.Wang, SCSubject: search.filters.subject.metalorganic chemical vapor deposition

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Now showing 1 - 6 of 6
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    InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition
    (2003-04-01)
    Lu, TC
    ;
    Tsai, JY
    ;
    Chu, JT
    ;
    Chang, YS
    ;
    Wang, SC
    Long-wavelength vertical cavity surface emitting lasers (VCSELs) are considered the best candidate for the future low-cost reliable light sources in fiber communications. However, the absence of high refractive index contrast in InP-lattice-matched materials impeded the development of 1.3-1.5 mum VCSELs. Although wafer fusions provided the alternative approaches to integrate the InP-based gain materials with the GaAs/AlAs materials for their inherent high refractive index contrast, the monolithic InP-based lattice-matched distributed Bragg reflectors (DBRs) are still highly attractive and desirable. In this report, we demonstrate InP/InGaAlAs DBRs with. larger refractive index contrast than InP/InGaAsP and InAlAs/InGaAlAs DBRs. The switching between InP and InGaAlAs layers and growth rate control have been done by careful growth interruption technique and accurate in situ optical monitoring in low-pressure metal organic chemical vapor deposition. A 35 pairs 1.55 mum centered InP/InGaAlAs DBRs has the stopband of more than 100 nut and the highest reflectivity of more than 99%. A VCSEL structure incorporating 3 5 pairs InP/InGaAlAs DBR as the bottom mirror combined with a 2lambda thick periodic gain cavity and 10 pairs SiO2/TiO2 top dielectric mirrors was fabricated. The VCSELs lased at 1.56 mum by optical pumping at room temperature with the threshold pumping power of 30 mW. (C) 2002 Elsevier Science B.V. All rights reserved.
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    Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes
    (2004-01-19)
    Lin, CF
    ;
    Yao, HH
    ;
    Lu, JW
    ;
    Hsieh, YL
    ;
    Kuo, HC
    The resonant-cavity light-emitting diode (RC-LED) structure was grown by MOCVD. The structure of RC-LED consisted of a 3lambda InGaN/GaN MQW LED cavity between the top TiO2/SiO2 DBR (81.7%, reflectance) and the bottom AlN/GaN DBR (90.4%) stack. A stable 410 nm emission peak and a low thermally induced red-shift effect (0.12 nm/kA/cm(2)) were measured by varying the injection current density. The light output power of the full RC-LED device was three times higher than the RC-LED without top TiO2/SiO2 DBR layers under 600 A/cm(2) inject current density. The narrow line width of 7.4 nm, emission peak localization at 410 nm, and three times higher output power were caused by the resonance effect in this vertical cavity structure. (C) 2003 Published by Elsevier B.V.
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    MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength
    (2004-01-19)
    Kuo, HC
    ;
    Chang, YS
    ;
    Lin, CF
    ;
    Lu, TC
    ;
    Wang, SC
    We present in this paper the metalorganic chemical vapor deposition growth and characterization of high-performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP/InGaP MQWs growth condition was optimized using photoluminescence. These VCSELs exhibit superior characteristics, with threshold currents similar to 0.4 mA, and slope efficiencies similar to 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than similar to 30% when the substrate temperature is raised from room temperature to 85degreesC. These VCSELs also demonstrate high-speed modulation bandwidth up to 12.5 Gbit/s from 25degreesC to 85degreesC. (C) 2003 Elsevier B.V. All rights reserved.
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    Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition
    (2004-02-25)
    Lu, TC
    ;
    Tsai, JY
    ;
    Kuo, HC
    ;
    Wang, SC
    ;
    光電工程學系
    Long wavelength vertical cavity surface emitting lasers (VCSELs) are considered the best candidates for the low cost reliable light emitters in fiber communications. The low refractive index contrast in the conventional InP-based lattice-matched distributed Bragg reflectors (DBRs), InP/InGaAsP, impeded the development of 1.3-1.5 mum VCSELs. However, the monolithic InP-based lattice-matched DBRs are still most attractive and desirable. The InP/InGaAlAs and InAlAs/InGaAlAs DBRs with larger refractive index contrast than the conventional InP/InGaAsP DBRs have been demonstrated recently. In this report, we compare these two material systems in terms of optical and electrical properties of DBRs. We found the InP/InGaAlAs DBRs have better electrical and optical properties, while the InAlAs/InGaAlAs DBRs have much lower growth complexity. (C) 2003 Elsevier B.V. All rights reserved.
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    MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission
    (2004-12-10)
    Kuo, HC
    ;
    Yao, HH
    ;
    Chang, YH
    ;
    Chang, YA
    ;
    Tsai, MY
    1.27mum InGaAs:Sb-GaAs-GaAsP vertical cavity surface-emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) with superior performance. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops below similar to35% when the temperature is raised from room temperature to 70degreesC. With only 5 mA of bias current, the 3 dB modulation frequency response is measured to be 8.36 GHz which is suitable for 10Gb/s operation. The maximal bandwidth is estimated to 10.7GHz with modulation current efficiency factor MCEF) of similar to5.25GHz/(mA)(1/2). The results of InGaAs:Sb-GaAs-GaAsP VCSELs can reach a performance level comparable to GalnAsN VCSELs with better thermal stability and should be considered as a very promising candidate for 1.3 mum commercial applications. (C) 2004 Elsevier B.V. All rights reserved.
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    MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser
    (2006-01-25)
    Chang, YA
    ;
    Chu, JT
    ;
    Ko, CT
    ;
    Kuo, HC
    ;
    Lin, CF
    In0.45Ga0.55As:Sb/GaAs (1.3 mu m) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In0.45Ga0.55As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 mu m with narrow fullwidth at half-maximum (FWHM) of 35.9meV. For the fabricated VCSEL with 5 mu m diameter oxide-confined aperture, a room-temperature (RT).threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 mu m emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz. (c) 2005 Elsevier B.V. All rights reserved.