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Now showing 1 - 9 of 9

Broadband CMOS Gilbert Down-Converter Utilizing a Low-Loss Step-Impedance Rat-Race Coupler
(2009)
Wei, Hung-Ju
;
Meng, Chinchun
;
Yu, Sheng-Wen
;
電信工程研究所
;
Institute of Communications Engineering
A Broadband Gilbert Down-Converter with step-impedance rat-race coupler is demonstrated using 0.13 mu m standard CMOS technology. The proposed method utilizes higher effective dielectric-constant, phase-inverter and step-impedance techniques simultaneously to make the rat-race coupler more compact (similar to 64% reduction) and phase-balanced over a wide operating bandwidth. The down-converter has NF of 16 dB and LO-to-RF isolation of better than 35 dB. The mixer core consumes 2.9 mA at V(dd)=1.8 V.
60-GHz Dual-Conversion Down-/Up-Converters Using Schottky Diode in 0.18 mu m Foundry CMOS Technology
(2012-06-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Wang, Ta-Wei
;
Lo, Tai-Lin
;
Wang, Chia-Ling
Due to the benefits of Schottky diodes, 0.18-mu m CMOS technology is being promoted for millimeter wave applications. In this paper, 60-GHz dual-conversion down-/up-converters using Schottky diodes are realized by using 0.18-mu m foundry CMOS technology. A CoSi2-Si Schottky diode, fabricated on a lower doped N-well by blocking the threshold voltage adjustment implant, has a lower reverse leakage current and a better ideality factor. Thus, it is ideal for the 60-GHz sub-harmonic mixer design. Two new types of Schottky-diode mixers, a down-conversion sub-harmonic mixer with a dual-band lump-distributed phase-inverter rat-race coupler and an up-conversion sub-harmonic mixer with a trifilar transformer, are realized and employed at the high-frequency conversion stage of the dual-conversion architecture to achieve small size and broadband isolations. The silicon-based Schottky diode with a low turn-on voltage offers great advantage in LO pumping power, especially for an antiparallel diode pair structure. In our Schottky-diode sub-harmonic mixers, the required LO power is only 1 dBm. The dual-conversion down-converter achieves 5-dB conversion gain and 19 dB noise figure under V-dd = 2.5 V and I-dd = 22 mA, and the dual-conversion up-converter, with V-dd = 2.5 V and I-dd = 26 mA, attains greater than 40-dB sideband rejection and -1 dB conversion gain over the whole 60-GHz bandwidth.
Injection-locked Galnp/GaAs HBT frequency divider with stacked transformers
(2007-10-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, Yuwen
;
Huang, Guo-Wei
;
電信工程研究所
The first integrated GaInP/GaAs heterojunction bipolar transistor (HBT) injection-locked frequecy divider (ILFD) with the stacked transformers is demonstrated around 10 GHz. The stacked transformers formed by only two metal layers provide the inductive coupling in the cross feedback and separate biasing for base and collector to allow for the larger output swing in the LC tank and obtaining wide locking range. Under the supply voltage of 5 V and core power consumption of 20.5 mV the locking range is 7.8% of the center operating frequency. The chip size of the entire ILFD including probing pads is 1.0 x 1.0 mm(2). (c) 2007 Wiley Periodicals. Inc.
K-band CMOS sub-harmonic resistive mixer with a miniature Marchand balun on lossy silicon substrate
(2008-01-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Wu, Po-Yi
;
Tsung, Kuan-Chang
;
電信工程研究所
A K-band sub-harmonically pumped resistive mixer is demonstrated using standard 0.13 mu m CMOS technology. A miniature Marchand Balun is integrated with the resistive mixer to generate equal amplitude and out-of-phase signals for mixer's local oscillation (LO) port directly on the lossy silicon substrate. The sub-harmonic resistive mixer with the integrated Marchand balun has conversion loss of 11-12 dB at f(IF) = 100 MHz and P-LO = 7 dBm for RF frequencies from 18 to 26 GHz. The LO-RF and LO-IF isolations are approximately 30 and 33 dB, respectively.
Comparison of GaInP/GaAs HBT RFDs with resistive loads and shunt-shunt feedback active loads
(2008-02-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, Yuwen
;
Huang, Guo-Wei
;
電信工程研究所
An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated from 4 to 26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active loading type obviously has wider operating frequency and lower input sensitivity. The f(max)/f(min), ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7 mW at the supply voltage of 5 V The chip size is 1.0 x 1.0 mm(2). (c) 2007 Wiley Periodicals, Inc.
High-speed divide-by-4/5 prescalers with merged and gates using gainp/gaas hbt and sige hbt technolmes
(2008-06-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, YuWen
;
Lin, Yi-Chen
;
Huan, Guo-Wei
This paper demonstrates the divide-by-4/5 prescalers with merged AND gates in 2-mu m GaInP/GaAs heterojunction bipolar transistor (HBT) and 0.35-mu m SiGe HBT technologies. By biasing the HBT near the peak transit-time frequency (f(T)), the maxinnun operating frequency of a D-type flip-flop can be promoted. At the supply, voltage of 5 the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher-speed performance of 1-8 GHz at the cost of power consumption. (c) 2008 Wiley Periodicals, Inc.
A fully single-ended GaInP/GaAs HBT micromixer using an integrated active LO balun
(2008-07-01)
Wu, Tzung-Han
;
Lin, Yi-Chen
;
Meng, Chinchun
;
Wu, Tse-Hung
;
Wei, Hung-Ju
A Gilbert micromixer is demonstrated in this paper using GaInP/GaAS HBT technology. By using an on-chip active LO balun, the micromixer with the single-ended RF, LO, and IF ports is suitable for hybrid RF system applications. The port-to-port isolation has its best performance when the LO signal is balanced. The fully matched high-linearity micromixer has the conversion gain of 12dB, IP1dB of -9 dBm, IIP3 of 1 dBm when f(IF(input)) = 300 MHz, f(LO) = 3.5 GHz, and f(RF(output)) = 3.8 GHz. (C) 2008 Wiley Periodicals, Inc.
11.8 GHz GaInP/GaAs HBT dynamic frequency divider using HLO-FF technique
(2008-10-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, YuWen
;
Huang, Guo-Wei
;
電信工程研究所
An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) dynamic frequency divider based on HLO-FF (high-speed latching operating flip-flop) structure is demonstrated rot 4.1-11.8 GHz. In this experiment, et conventional static,frequency divider using the same cut-off-frequency device is also fabricated for comparison. By biasing the HBT transistors around the peak of f(T) and optimizing the I(read)/I(latch) tire maximum operating frequency of the HLO-FF is greatly improved date to higher slew-rate and smaller voltage swing. The speed of HLO-FF is faster about 48% than that of static structure. The core current is 13 mA cot the supply voltage of 5V. (C) 2005 Wiley Periodicals, Inc.
KU-BAND SiGe HBT I/Q SUBHARMONIC MIXER WITH REACTIVE QUADRATURE GENERATORS
(2010-07-01)
Tseng, Sheng-Che
;
Syu, Jin-Siang
;
Su, Jen-Yi
;
Wei, Hung-Ju
;
Meng, Chinchun
This article demonstrates a high-frequency 0.35-mu m SiGe HBT subharmonic downconverter with reactive in-phase and quadrature-phase (I/Q) generators. Two reactive I/Q generators are integrated in our work to provide differential quadrature RF and LO signal. The I/Q subharmonic downconverter with single-ended LO. RF. and IF (I/Q) ports has a conversion gain of 1 a. IP(1dB) of -10 dBm. IIP(3) of 0 dBm, and IIP(2) of 21 dBm at 16.4 GHz. The magnitude and phase errors between the I and Q channels are 1.34% and 0.6 degrees. respectively. The dc power consumption of this IIQ mixer without output buffers is approximately 5 mW. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1516-1520, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25281

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