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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

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Special section on multimedia and communication
(1998-02-01)
Wu, CH
;
Yuang, MC
;
Irwin, JD
;
交大名義發表
;
National Chiao Tung University
Chinese handwritten character segmentation in form documents
(1999)
Chen, JL
;
Wu, CH
;
Lee, HJ
;
資訊工程學系
;
Department of Computer Science
This paper presents a projection based method for segmenting handwritten Chinese characters in form documents with known structures. In the preprocessing phase, a noise removal method is proposed that preserves stroke connections and character edge points. In the character segmentation phase, the projection profile analysis method is used to segment a text line image into projection blocks. In addition, projection blocks are classified into one of four types: mark, half-word, single-word, and two-word. Large blocks are then split and small blocks are merged. In addition, an OCR system is adopted to eliminate errors resulting from the inappropriate merging of Chinese numerical characters with other characters. As for 1319 Chinese characters are tested during our experiments, the correct segmentation rates of 92.34% and 91.76% are obtained with and without the OCR module.
A more expressive monitor for concurrent Java programming
(2000)
Chiao, HT
;
Wu, CH
;
Yuan, SM
;
資訊工程學系
;
Department of Computer Science
The thread synchronization mechanism employed by Java is derived from the Hoare's monitor concept. In order to minimize its implementation complexity, the monitor provided by Java is quite primitive. This design decision prefers simple concurrent objects and single-thread programs. However, we think the Java monitor is over simplified for developing more elaborated concurrent objects. Besides, several features of the Java monitor will bring extra overhead when thread contention gets higher. Currently, we have identified five drawbacks of the Java monitor. In this paper, we will first analyze these drawbacks in depth, and then propose a new monitor-based synchronization mechanism called EMonior. It has better expressive power, and introduces fewer overheads than the Java monitor when contention occurs. EMonior uses a preprocessor to translate the Java programs containing EMonitor syntax to regular Java programs that invoke EMonitor class libraries. It is very suitable to replace the Java monitor with the EMonitor when developing elaborate concurrent objects or high-contention concurrent systems.
Role of haptoglobin in formation of atherosclerosis
(2001-03-07)
Mao, SJT
;
Yang, SJ
;
Wu, CH
;
交大名義發表
;
National Chiao Tung University
A novel wafer reclaim method for silicon carbide film
(2003)
Tsui, BY
;
Fang, KL
;
Wu, CH
;
Li, YH
;
電子工程學系及電子研究所
As feature size keeps shrinking down, it is expected that amorphous SiC will replace Si3N4 in the Cu dual-damascene structure soon. SiC is chemically inert and is hard to be etched by wet processing. This property become adverse effect from the wafer reclaiming point of view. In this work, a novel wafer reclaiming method of oxidation followed by HF etching is proposed. Comparing with traditional reclaim method of wafer polish, this novel method exhibits great benefits of low cost, high throughput, and almost unlimited reclaim times.
Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs
(2003)
Huang, CH
;
Yu, DS
;
Chin, A
;
Wu, CH
;
Chen, WJ
We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO2/Si and Al2O3/Ge-On-Insulator (GOI) MOSFETs (EOT = 1.7nm). In additional to the comparable gate current and time-to-breakdown with AI gate C-MOSFETs, the fully NiSi and NiGe gates on SiO2/Si show mobility close to universal mobility while on Al2O3/GOI show similar to2.0X higher peak electron and hole mobility than Al on Al2O3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.
Design of a concurrent dual-band receiver front-end in 0.18um CMOS for WLANs IEEE 802.11a/b/g applications
(2004)
Jou, CF
;
Cheng, KH
;
Lien, WC
;
Wu, CH
;
Yen, CH
A fully monolithic dual-band concurrent receiver chip for IEEE 802.11 a, 802.11 b and 802.11 g applications is presented in a 0.18-mum CMOS 1P6M technology. A low IF architecture was chosen in order to achieve a low-cost and low-power solution with a high level of integration compared to direct conversion architecture. This mixer can operate as a sub-harmonic mixer and even as a traditional Gilbert mixer if LO ports connecting to each other to found two RF inputs and two LO inputs. For a 1.8V power supply, the overall power consumptions are 84.3 mW, with 3.5 dB and 6.3 dB overall receive-chain noise figure for 2.45 GHz and 5.25 GHz, respectively.
High hole mobility of Al2O3 mosfets on dislocation free Ge-on-insulator wafers
(2004)
Chin, A
;
Yu, DS
;
Wu, CH
;
Huang, CH
;
Chen, WJ
The much degraded mobility, high-kappa dielectric crystallization, and EOT reduction after processing are the primary limitations of high-kappa gate dielectric MOSFETs. We have fabricated the high-kappa Al2O3 MOSFET on Geon-Insulator to enhance the hole mobility. The measured hole mobility with 1.7 nm EOT is 73 cm(2)/Vs at E-eff of 1 MV/cm, which is 2.5 times and 1.3 times higher than and Al2O3/Si control devices and SiO2/Si universal mobility, respectively. In additional to good dielectric reliability, the low temperature process (less than or equal to500degreesC) can also avoid high-kappa dielectric crystallization and EOT reduction by O-2 or moisture penetration through high-kappa dielectric.
Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference
(2005)
Yu, DS
;
Chin, A
;
Wu, CH
;
Li, MF
;
Zhu, C
Metallic diffusion through high-K HfO(2), caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (phi(m,eff)) of 4.25 and 5.15 eV are obtained in TaTb(0.2)N/HfAlON and Ir/HfAlON at 1.7nm EOT. Good dual phi(m,eff) of 4.15 and 4.9 eV are also obtained in Yb(x)Si/HfAlON and Ir(x)Si/HfAlON FUSI-gates by reduced metal diffusion at lower temperature.
Photoluminescence of ultra small InAs/GaAs quantum dots
(2005-08-10)
Lin, YG
;
Wu, CH
;
Tyan, SL
;
Lin, SD
;
Lee, CP
The InAs/GaAs quantum dots (QDs) with a baselength of less than 10 nm are studied by the excitation-, temperature-dependent and magneto-photoluminescence (PL). The baselengths of the QDs, calculated by the PL ground state transition energy and estimated by magneto-PL spectra, axe in agreement with the result of atomic force microscopy measurements. By means of the excitation-dependent PL, we demonstrate that only the ground electron and hole states exist when the baselength of the QDs is smaller than about 7.3 nm, whereas the larger dots with a baselength of about 8.7 nm will give rise to one excited hole state. The measured energy separation between the ground and the excited hole states is in good agreement with the theoretical calculation. The transition energy in temperature-dependent PL spectra shows a rapid redshift as the temperature is higher than the critical temperature. The redshift rate is about 2.8 and 2.5 times larger than the values calculated by Varshni's law for small and large dots respectively. The higher redshift rate can be explained by the stronger tunneling effect. In addition, the PL linewidths show a V-shape dependence with the temperature. This behavior could be well described as a tunneling and electron-phonon scattering effect.

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