學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 9 of 9

A high 2LO-to-RF isolation GaInP/GaAs HBT sub-harmonic Gilbert mixer using three-level topology
(2006)
Wu, Tzung-Han
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
;
Institute of Communications Engineering
A 5.2 GHz three-level sub-harmonic downconversion Gilbert mixer using GaInP/GaAs HBT (Heterojunction Bipolar Transistor) technology is demonstrated in this paper. The LO frequency is half of the RF frequency for the three-level sub-harmonic mixer architecture; therefore, the RF frequency is 5.2004 GHz and LO frequency is 2.6 GHz. The conversion gain is 14.5 dB, IP(1dB') is -18 dBm, IIP(2) is 13 dBm and the IIP(3) is -5 dBm when the LO power equals to -8 dBm. The 2LO-to-RF leakage is about -83 dBm. The RF input return loss is better than -18 dB from DC to 6GHz.
A high 2LO-RF isolation SiGeBiCMOS sub-harmonic Gilbert mixer using stacked-LO-stage topology
(2006)
Wu, Tzung-Han
;
Meng, Chinchun
;
電信工程研究所
;
Institute of Communications Engineering
A 5.2 GHz SiGe BiCMOS stacked-LO-stage CMFB (Common Mode Feedback) sub-harmonic mixer is demonstrated in this letter. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (Heterojunction Bipolar Transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation.
Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology
(2007)
Wu, Tzung-Han
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
;
Institute of Communications Engineering
A GaInP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.
5.2/5.7-GHz 48-dB image rejection GaInP/GaAs HBT weaver down-converter using LO frequency quadrupler
(2006-11-01)
Wu, Tzung-Han
;
Meng, Chinchun
;
電信工程研究所
;
Institute of Communications Engineering
A GaInP/GaAs heterojunction bipolar transistor (HBT) down-converter using the Weaver architecture is demonstrated in this paper. The Weaver system is a double-conversion image rejection heterodyne, system which requires no bandpass filters in the signal path and no quadrature networks. The Weaver down-converter has the image rejection ratios of 48 dB and 44 dB when the RF frequency is 5.2 GHz and 5.7 GHz, respectively. A new frequency quadrupler is employed in the down-converter to generate the local oscillator (LO) signals. The frequency quadrupler is designed to minimize the phase error when generating LO signals and thus the image rejection performance is improved. A diagrammatic explanation using the complex mixing technique to analyze the image rejection mechanism of the Weaver architecture is developed in this paper. From our analysis, the image rejection can be further improved by making the LO1 and LO2 signals coherent.
10-GHz SiGeBiCMOS sub-harmonic Gilbert mixer using the fully symmetrical and time-delay compensated LO cells
(2007-02-01)
Wu, Tzung-Han
;
Meng, Chinchun
;
電信工程研究所
;
Institute of Communications Engineering
A 10-GHz sub-harmonic Gilbert mixer is demonstrated in this paper using the 0.35 mu m SiGe BiCMOS technology. The time-delay when the sub-harmonic LO (Local Oscillator) stage generates subharmonic LO signals is compensated by using fully symmetrical multiplier pairs. High RF-to-IF isolation and sub-harmonic LO Gilbert cell with excellent frequency response can be achieved by the elimination of the time-delay. The SiGe BiCMOS sub-harmonic micromixer exhibits 17 dB conversion gain, -74 dB 2LO-to-RF isolation, IP1dB of -20 dBm, and IIP3 Of -10 dBm. The measured double sideband noise figure is 16 dB from 100-kHz to 100-MHz because the SiGe bipolar device has very low 1/f noise corner.
5.2 Ghz high isolation sige BICMOS CMFB Gilbert mixer
(2007-02-01)
Meng, Chinchun
;
Wu, Tzung-Han
;
Wu, Tse-Hung
;
Huang, Guo-Wei
;
電信工程研究所
Active PMOS loads with common mode feedback to stabilize the bias points are employed in the Gilbert mixer loads to increase the mixer gain. Good device matching and the deep trench isolation technique in the SiGe HBT technology can improve the port-to-port isolations. A 16 dB conversion gain, Ip(ldB) = -21 dBm and IIP3 = - 11 dBm using 0.35 mu m SiGe BiCMOS Gilbert downconversion micromixer is demonstrated when RF = 5.2 GHz and LO = 5.17 GHz with -66 dB LO-IF, -52 dB LO-RF, and -24 dB RF-IF isolations. (c) 2006 Wiley Periodicals, Inc.
A 5.2 GHz 47 dB image rejection double quadrature Gilbert downconverter using 0.35 mu m SiGe HBT technology
(2007-02-01)
Wu, Tzung-Han
;
Meng, Chinchun
;
Wu, Tse-Hung
;
Huang, Guo-Wei
;
電信工程研究所
A 5.2 GHz 1 dB conversion gain, IP(1dB) = - 19 dBm and IIP(3)= -9dBm double quadrature Gilbert downconversion mixer with polyphase filters is demonstrated by using 0.35 mu m SiGe HBT technology. The image rejection ratio is better than 47 dB when LO=5.17 GHz and IF is in the range of 15 MHz to 45 MHz. The Gilbert downconverter has four-stage RC-CR IF polyphase filters for the image rejection. Polyphase filters are also used to generate LO and RF quadrature signals around 5 GHz in the double quadrature downconverter.
GaInP/GaAs HBT sub-harmonic Gilbert mixers using stacked-LO and leveled-LO topologies
(2007-05-01)
Wu, Tzung-Han
;
Tseng, Sheng-Che
;
Meng, Chin-Chun
;
Huang, Guo-Wei
;
電信工程研究所
This paper discusses and demonstrates the most popular sub-harmonic Gilbert mixers in 2-mu m GaInP/GaAs HBT technology. High two local oscillators (2LO)-to-RF isolation is important to alleviate the self-mixing problem of the sub-harmonic mixer. The demonstrated GaInP/GaAs HBT stacked-local oscillator (LO) mixer topology has achieved the best 2LO-to-RF isolation when compared with the previous literature. On the other hand, the leveled-LO sub-harmonic mixers have advantages in terms of the high speed and low dc supply voltage at the cost of much larger LO pumping power. Among all the structures, the bottom-LO sub-harmonic mixer has the lowest current consumption and the simplest circuit structure at the expense of the 2LO-to-RF isolation.
GaInP/GaAs HB broadband inductorless receiver
(2008-01-01)
Wu, Tzung-Han
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
;
Institute of Communications Engineering
A GaInP/GaAs HBT broadband RF front-end consisting of a low-noise wideband amplifier and a micromixer is demonstrated in this article. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth. (c) 2007 Wiley Periodicals, Inc.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results