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Author: search.filters.author.Wu, Tzung-HanSubject: search.filters.subject.micromixer

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Now showing 1 - 4 of 4
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    Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology
    (2007)
    Wu, Tzung-Han
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A GaInP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.
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    Item type:Item,
    10-GHz highly symmetrical sub-harmonic Gilbert mixer using GaInP/GaAs HBT technology
    (2007-05-01)
    Wu, Tzung-Han
    ;
    Meng, Chinchun
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A 10-GHz sub-harmonic Gilbert mixer is demonstrated using GaInP/GaAs hetero-junction bipolar transistor technology. The local oscillator (LO) signal time-delay path in the sub-harmonic LO stage is compensated using the fully symmetrical stacked-LO doubler; therefore, the balance of the sub-harmonic LO stage, the radio frequency to intermediate frequency isolation, and IIP2 are improved. The demonstrated 10-GHz sub-harmonic mixer achieves 10 dB conversion gain, IP1dB of -12 dBm, IIP3 of 2 dBm and IIP2 of 33 dBm.
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    GaInP/GaAs HB broadband inductorless receiver
    (2008-01-01)
    Wu, Tzung-Han
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A GaInP/GaAs HBT broadband RF front-end consisting of a low-noise wideband amplifier and a micromixer is demonstrated in this article. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth. (c) 2007 Wiley Periodicals, Inc.
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    Item type:Item,
    A fully single-ended GaInP/GaAs HBT micromixer using an integrated active LO balun
    (2008-07-01)
    Wu, Tzung-Han
    ;
    Lin, Yi-Chen
    ;
    Meng, Chinchun
    ;
    Wu, Tse-Hung
    ;
    Wei, Hung-Ju
    A Gilbert micromixer is demonstrated in this paper using GaInP/GaAS HBT technology. By using an on-chip active LO balun, the micromixer with the single-ended RF, LO, and IF ports is suitable for hybrid RF system applications. The port-to-port isolation has its best performance when the LO signal is balanced. The fully matched high-linearity micromixer has the conversion gain of 12dB, IP1dB of -9 dBm, IIP3 of 1 dBm when f(IF(input)) = 300 MHz, f(LO) = 3.5 GHz, and f(RF(output)) = 3.8 GHz. (C) 2008 Wiley Periodicals, Inc.