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學術出版;;Publications

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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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1995 - 199922000 - 20071

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    Item type:Item,
    SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1995-09-01)
    WANG, CJ
    ;
    WU, JW
    ;
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.
  • Thumbnail Image
    Item type:Item,
    Investigation of inversion capacitance-voltage reconstruction for metal oxide semiconductor field effect transistors with leaky dielectrics using BSIM4/SPICE and intrinsic input resistance model
    (2007-04-01)
    Lee, Wei
    ;
    Su, Pin
    ;
    Su, Ke-Wei
    ;
    Chiang, Chung-Shi
    ;
    Liu, Sally
    This paper presents an inversion capacitance-voltage (C-V) reconstruction method for long-channel metal oxide semiconductor field effect transistors (MOSFETs) using the BSIM4/SPICE and the intrinsic input resistance (R-ii) model. The concept of Rii has been validated by segmented BSIM4/SPICE simulation. Since the Rii model is scalable with V-Gs and L, our R-ii approach is physically accurate. Due to its simplicity, this method may provide an option for regular process monitoring purposes.
  • Thumbnail Image
    Item type:Item,
    SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1995-09-01)
    WANG, CJ
    ;
    WU, JW
    ;
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.