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Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors
(2020-08-01)
Huang, Shin-Ping
;
Chen, Hong-Chih
;
Chen, Po-Hsun
;
Zheng, Yu-Zhe
;
Chu, Ann-Kuo
The extent of the poly-silicon crystalline protrusion, a result of differences in excimer laser annealing (ELA), affects the performance and reliability of thin-film transistors (TFTs). This study investigates the degradation mechanism of the low-temperature polycrystalline silicon (LTPS) TFT devices with differences in crystalline protrusion under self-heating stress (SHS). Higher ELA energy will induce higher protrusion height in the interface between the poly-silicon and gate insulator (GI). This surface morphology leads to serious charge trapping into the GI layers; in contrast, the smallest degradation after SHS can be seen in the devices with the lowest protrusion height. This indicates that the degradation is caused by the surface morphology between the poly-Si and GI interface. In addition, the COMSOL simulation results confirm that the large electric field in the GI layer appears in the rough surface morphology devices; therefore, choosing the appropriate ELA energy of the poly-Si is beneficial for the applications of the driving TFT in organic light-emitting diode (OLED) display in the manufacturing industry.
Enhancement of Mechanical Bending Stress Endurance Using an Organic Trench Structure in Foldable Polycrystalline Silicon TFTs
(2020-05-01)
Zheng, Yu-Zhe
;
Huang, Shin-Ping
;
Chen, Po-Hsun
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
This letter proposes a new organic trench structure which can enhance the endurance of polycrystalline silicon thin film transistors (TFTs) under mechanical bending stress. It compares conventional structure TFTs to devices with an organic trench to examine reliability after undergoing 100,000 iterations of channel width-axis (100,000'WC) compression at R = 2mm. Due to the low Young's modulus of organic materials, stress while undergoing bending strain is desorbed to the buffer layer, which can lower the overall stress in TFTs. Furthermore, an optimal location and ideal length for such an organic trench is evaluated by mechanical bending simulation.
Analysis of Negative Bias Temperature Instability Degradation in p-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistors of Different Grain Sizes
(2019-11-01)
Tu, Hong-Yi
;
Tsao, Yu-Ching
;
Tai, Mao-Chou
;
Chang, Ting-Chang
;
Tsai, Yu-Lin
This letter investigates degradation after negative bias temperature instability (NBTI) stress applied to LTPS TFTs with different polycrystalline-silicon grain sizes. The initial characteristics of the LTPS TFTs are similar regardless of grain size; however, we observed a different degree of degradation after NBTI depending on grain size. In general, after NBTI, both grain boundary traps and interface traps were generated. We found that the degree of NBTI degradation is dominated by the concentration of grain boundary traps, which themselves are a result of the different grain sizes that occur due to excimer laser annealing energy. At initial, dangling bonds in the grain boundaries and at the interface are passivated by hydrogen atoms, hence the initial characteristics are similar. Since the large grain of poly-Si initially generates more dangling bonds in the grain boundaries, after NBTI, hydrogen depassivation generates more grain boundary traps and causes much more serious degradation in device performance.
Abnormal C-V Hump Effect Induced by Hot Carriers in Gate Length-Dependent p-Type LTPS TFTs
(2019-11-01)
Huang, Shin-Ping
;
Chen, Po-Hsun
;
Tsao, Yu-Ching
;
Chen, Hong-Chih
;
Zheng, Yu-Zhe
We investigate the abnormal current-voltage (C-V) hump effect of p-type low-temperature polysilicon (LTPS) thin-film transistors (TFTs) which have undergone high current operations. Experimental results indicate localized electron trapping in the gate insulator (GI), which is carried out near the drain. The ON-current ( ${I}_{ \mathrm{\scriptscriptstyle ON}}$ ) enhancement is due to the reduction of effective length, and the OFF-current ( ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) decrease as the electron tunneling path distance increases. These can be observed after hot carrier stress in current characteristics. The C-V measurements demonstrate that the threshold voltage ( ${V}_{\text {th}}$ ) shift is associated with the gate length. In addition, capacitance-voltage measurements also show that this localized trapping region remains the same in length, regardless of channel length. Hence, a model is proposed to explain how the electric field, which is gate length-dependent, affects the source side of the device, and then lowers the source barrier height. This leads to bulk leakage, which causes the subthreshold swing degradation at device scale down.
Power-to-fuels via solid-oxide electrolyzer: Operating window and techno-economics
(2019-08-01)
Wang, Ligang
;
Chen, Ming
;
Kungas, Rainer
;
Lin, Tzu-En
;
Diethelm, Stefan
Power-to-fuel systems via solid-oxide electrolysis are promising for storing excess renewable electricity by efficient electrolysis of steam (or co-electrolysis of steam and CO2) into hydrogen (or syngas), which can be further converted into synthetic fuels with plant-wise thermal integration. Electrolysis stack performance and durability determine the system design, performance, and long-term operating strategy; thus, solid-oxide electrolyzer based power-to-fuels were investigated from the stack to system levels. At the stack level, the data from a 6000-h stack testing under laboratory isothermal conditions were used to calibrate a quasi-2D model, which enables to predict practical, isothermal stack performance with reasonable accuracy. Feasible stack operating windows meeting various design specifications (e.g., specific syngas composition) were further generated to support the selection of operating points. At the system level, with the chosen similar stack operating points, various power-to-fuel systems, including power-to-hydrogen, power-to-methane, power-to-methanol (dimethyl ether) and power-to-gasoline, were compared techno-economically considering system-level heat integration. Several operating strategies of the stack were compared to address the increase in stack temperature due to degradation. The modeling results show that the system efficiency for producing H-2, methane, methanol/dimethyl ether and gasoline decreases sequentially from 94% (power-to-H-2) to 64% (power-to-gasoline), based on a higher heating value. Co-electrolysis, which allows better heat integration, can improve the efficiency of the systems with less exothermic fuel-synthesis processes (e.g., methanol/dimethyl ether) but offers limited advantages for power-tomethane and power-to-gasoline systems. In a likely future scenario, where the growing amount of electricity from renewable sources results in increasing periods of a negative electricity price, solid oxide electrolyser based power-to-fuel systems are highly suitable for levelling the price fluctuations in an economic way.
Microwave-granular activated carbon (MW-GAC) system for carbofuran degradation: Analysis of characteristics and recyclability of the spent GAC
(2015-02-06)
Remya, Neelancherry
;
Lin, Jih-Gaw
;
環境工程研究所
;
Institute of Environmental Engineering
Granular activated carbon (GAC) is frequently used to remove pollutants from wastewater. However, the mechanism of pollutant removal by GAC is by adsorption and hence spent GAC should be regenerated and used for several cycles for minimizing the cost of treatment. In the present study, the characteristics of GAC and carbofuran removal mechanism were explored in a microwave-GAC (MW-GAC) system. Carbofuran removal by adsorption was 52% at a GAC loading of 0.8g/L. However, complete carbofuran degradation from aqueous solution as well as from GAC surface was obtained within 30min in a MW-GAC system. In addition, A COD removal efficiency of 72% was observed in the MW-GAC system at pH 8 and 80 degrees C after 30min. The degradation occurred mainly through cleavage of carbamate group and oxidation of furan ring. Carbofuran removal by adsorption was enhanced with MW exposed GAC due to the improvement in the surface property on exposure to MW. On the other hand, recyclability of MW exposed GAC in the MW-GAC system indicated > 99% degradation of carbofuran in all the three cycles tested. As a whole, complete degradation of carbofuran and the effective recycling of the spent GAC could be achieved in the MW-GAC system.
電子可擦式記憶元件及電路之可靠度研究與改進
(1993)
吳重雨
;
交通大學電子工程研究所(NCTEELN)
ぇ於HMC現有的Process架構下,改變Process參數:用既有的結構(如EEPROM, DRAM, etc..),改變SiO/sub 2/之厚度(如Tunnel Oxide或InterpolyOxide),以觀察在各情況下 F-N Tunneling和Hot-carrier相互消長的情形.亦可改變 Interpoly Oxide之材質(如將SiO/sub 2/改為Si/sub 3/N/sub4 /),以測量其Retention及Coupling Ratio之變化,並就以上測量結果提出最佳狀況之條件.え寄放於HMC將出的New Product之Test Key內,設計New Structures:a, CMOS Process Compatible EEPROM.b, 用DRAM之PROCESS,設計New Structure, Combines both DRAM and EEPROMCells.c,MONOS.d,Flash EEPROM, by EEPROM Process.ぉ就HMC所提供量產的元件作特性量測:a,High-frequency Program/Erase.可使EERPOM具有Selective Programming/Erasing,較低的 Electric FieldAcross Oxide, Endurance更好.Self Limited:不會Over Erase.b,Low-Temperature Characterization.在低溫超導的趨式Memory-Device應用在Low Temperature 勢必為未來趨式,而且是一個新的領域.c,Degradation的研究:
抑制深次微米金氧半電晶體中能帶間穿隧漏電流引致性能劣化之設計規範
(1995)
陳明哲
;
CHEN MING-JER
;
國立交通大學電子工程研究所
本計畫將以一年時間全力投注於攸關深次微米金氧半元件技術可靠性的重要課題:穿隧引致漏電流及其衍生性能劣化,以強化研究深度、建立完整理論架構、實驗驗證,並提出量化之設計規範以抑制此問題.理論架構涵蓋了二維模擬漏電流解析式物理模式及性能劣化解析式物理導向經驗公式,量測範圍在不同Stress 時間、不同高低溫、不同偏壓及不同脈衝條件下為之,所量測的測試鍵涵蓋了不同閘氧化層厚度,不同汲極結構及不同n/sup +/及p/sup +/攙雜閘極層等,利用受到強力實驗支持的解析式漏電流物理模式及性能劣化解析式物理導向經驗公式,量化之設計規範將被提出以抑制在深次微米金氧半元件中穿隧引致漏電流過大及其造成性能劣化之問題.
積層式氧化鋅變阻器衰化現象之研究
(1996)
曾俊元
;
TSEUNG-YUENTSENG
;
國立交通大學電子工程學系
深次微米元件內熱載子效應所造成汲極漏電流特性退化之研究
(1999)
汪大暉
;
WANG TAHUI
;
交通大學電子工程系

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