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A physics-based transit time model for GaInP/GaAs HBT devices
(2005)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Chen, Wei-Yu
;
Su, Jen-Yi
;
電信工程研究所
A compact physics-based transit time model has been established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit time frequency versus bias (I(C), V(CE)) especially at low and medium current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit time frequency versus bias (I(C), V(CE)) more precisely. This model has obvious advantage over the VBIC model to show the relation between the f(t) versus bias (I(C), V(CE)) in the low and medium current regimes for GaInP/GaAs HBT devices.
A high 2LO-to-RF isolation GaInP/GaAs HBT sub-harmonic Gilbert mixer using three-level topology
(2006)
Wu, Tzung-Han
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
;
Institute of Communications Engineering
A 5.2 GHz three-level sub-harmonic downconversion Gilbert mixer using GaInP/GaAs HBT (Heterojunction Bipolar Transistor) technology is demonstrated in this paper. The LO frequency is half of the RF frequency for the three-level sub-harmonic mixer architecture; therefore, the RF frequency is 5.2004 GHz and LO frequency is 2.6 GHz. The conversion gain is 14.5 dB, IP(1dB') is -18 dBm, IIP(2) is 13 dBm and the IIP(3) is -5 dBm when the LO power equals to -8 dBm. The 2LO-to-RF leakage is about -83 dBm. The RF input return loss is better than -18 dB from DC to 6GHz.
Determining GaInP/GaAs HBT device structure by DC measurements on a two-emitter HBT device and high frequency transit time measurements
(2005-06-01)
Meng, CC
;
Tsou, BC
;
Tseng, SC
;
電信工程研究所
;
Institute of Communications Engineering
A method to monitor the GaInP/GaAs HBT device structure including emitter ledge thickness is demonstrated in this paper. The base thickness and base doping density are obtained through base transit time and base sheet resistance measurements while the base transit time is measured through the cut-off frequency measurements at various bias points. A large size two-emitter HBT device is used to measure the ledge thickness. Emitter doping profile and collector doping profile are obtained by the large size HBT device through C-V measurements. An FATFET device formed by two emitters as drain and source terminals and the interconnect metal as the on-ledge Schottky gate between two emitters is used to measure the ledge thickness.
Kukielka and Meyer Wideband Dual Feedback Amplifiers Using GaInP/GaAs HBT Technology
(2009)
Syu, Jin-Siang
;
Wu, Tzung-Han
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
GaInP/GaAs HBT inductorless wideband amplifiers using shunt-series shunt-shunt dual-feedback topology (Kukielka topology) and shunt-series series-shunt dual-feedback topology (Meyer topology) are demonstrated in this paper. Three amounts of feedback are applied on each topology. At the high gain mode, the Kukielka/Meyer wideband amplifier achieves the small-signal power gain of 30/27 dB with the 3-dB bandwidth of 6 GHz at a 5-V supply. The noise figure of both amplifiers is lower than 3 dB within 6 GHz. Increasing the amount of feedback widens the bandwidth at the cost of power gain and noise figure degradation.
A modified HICUM model for GaInP/GaAs HBT devices
(2006-04-01)
Tseng, SC
;
Meng, CC
;
Chen, WY
;
Su, JY
;
電信工程研究所
A compact physics-based transit-time model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit-time frequency versus bias (I-C, V-CE), especially at low- and medium-current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit-time frequency versus bias (I-C, V-CE) more precisely. This model has obvious advantages over the VBIC model for showing the relation oj'f, versus bias (I-C, V-CE) in the low and medium current regimes for GaInP/GaAs HBT devices. (c) 2006 Wiley Periodicals, Inc.
5.2-GHz GaInP/GaAs HBT cascode LNA with 5.5 dB gain enhancement using inter-stage LC matching
(2006-08-01)
Meng, CC
;
Jhong, JC
;
電信工程研究所
;
Institute of Communications Engineering
A gain boosting method without noise-figure degradation by optimizing interstage matching in a coscode low-noise amplifier (LNA) with emitter-degeneration inductor is demonstrated at 5.2 GHz using 2-mu m GaInP/GaAs HBT technology. A low-pass LC matching network is inserted in the interstage of a conventional cascode LNA with emitter-degeneration-inductor to enhance the gain with the same current consumption. The 2-mu m GaInP/GaAs HBT LNA without interstage matching has 14-dB power gain and 2.37-dB noise figure at 5.2 GHz while the 2-mu m GaInP/GaAs HBT LNA with interstage matching has 19.5-dB power gain and 2.22-dB noise figure at 5.2 GHz. The current consumption is 2.3 mA and voltage supply is 3.6 V. (c) 2006 Wiley Periodicals, Inc.
Broadband GaInP/GaAs HBT regenerative frequency divider with active loads
(2007)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, YuWen
;
Huang, Guo-Wei
;
電信工程研究所
An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated at 4 GHz-26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active-loading type obviously has wider operating frequency and lower input sensitivity. The f(max)/f(min) ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7mW at the supply voltage of 5 V. The chip size is 1.0 x 1.0 mm(2).
Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology
(2007)
Wu, Tzung-Han
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
;
Institute of Communications Engineering
A GaInP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.
GaInP/GaAs HBT sub-harmonic Gilbert mixers using stacked-LO and leveled-LO topologies
(2007-05-01)
Wu, Tzung-Han
;
Tseng, Sheng-Che
;
Meng, Chin-Chun
;
Huang, Guo-Wei
;
電信工程研究所
This paper discusses and demonstrates the most popular sub-harmonic Gilbert mixers in 2-mu m GaInP/GaAs HBT technology. High two local oscillators (2LO)-to-RF isolation is important to alleviate the self-mixing problem of the sub-harmonic mixer. The demonstrated GaInP/GaAs HBT stacked-local oscillator (LO) mixer topology has achieved the best 2LO-to-RF isolation when compared with the previous literature. On the other hand, the leveled-LO sub-harmonic mixers have advantages in terms of the high speed and low dc supply voltage at the cost of much larger LO pumping power. Among all the structures, the bottom-LO sub-harmonic mixer has the lowest current consumption and the simplest circuit structure at the expense of the 2LO-to-RF isolation.
A High-Speed HBT Prescaler Based on the Divide-by-Two Topology
(2007)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, Yuwen
;
Lin, Yi-Chen
;
Huang, Guo-Wei
This paper demonstrates the Divide-by4/5 prescalers with merged AND gates in 2 mu m GaInP/GaAs heterojunction bipolar transistor (HBT) and 035 mu m SiGe HBT technologies. By biasing the HBT near the peak transit-time frequency (f(tau)), the maximum operating frequency of a D-type flip-flop (D-FF) can be promoted. At the supply voltage of 5 V, the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher-speed performance of 1 GHz similar to 8 GHz at the cost of power consumption.

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