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Subject: search.filters.subject.POLYSILICON

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Now showing 1 - 4 of 4
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    INVESTIGATION ON THE INTERFACE OF THE POLYCRYSTALLINE SILICON CONTACTED DIODE FORMED WITH A STACKED AMORPHOUS-SILICON FILM
    (1992-08-01)
    WU, SL
    ;
    LEE, CL
    ;
    LEI, TF
    ;
    LEE, TL
    ;
    CHEN, LJ
    The structural morphology of the poly-single crystalline silicon interface of a diode formed with a stacked-amorphous-silicon (SAS) film has been investigated. Secondary ion mass spectroscopy analyses showed the existence of multi-dopant segregation peaks at each layer boundary and at the poly-single crystalline silicon interface. The break-up at the poly-single silicon interface and the epitaxial regrowth of the polysilicon realigned to the silicon substrate were found to depend not only on the polysilicon deposition and the post annealing conditions, but also on the number and the thickness of the stacked amorphous silicon layers. For the diode formed with a six-layer stacked amorphous silicon, break-up of the interface was found to occur even at an annealing temperature as low as 900-degrees-C. After an additional annealing at 1000-degrees-C for 20 min, the interface was fully broken-up and the epitaxial regrowth layer of the polysilicon could be as thick as 760 angstrom.
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    THE IMPACT OF TITANIUM SILICIDE ON THE CONTACT RESISTANCE FOR SHALLOW JUNCTION FORMED BY OUT-DIFFUSION OF ARSENIC FROM POLYSILICON
    (1993-01-01)
    YANG, WL
    ;
    LEI, TF
    ;
    HUANG, CT
    ;
    LEE, CL
    ;
    電子工程學系及電子研究所
    A novel technology of Ti-polycided shallow junctions formed by out-diffusion of As+ from polysilicon was proposed and investigated. Junction depth as shallow as 0.1 mum and leakage current density as small as 0. 4 nA/cm2 can be easily obtained by this process. Contact resistance measurements show that the presence of a deliberately grown interfacial oxide leads to a significant increase in the contact resistance and small values of the specific contact resistivity (4 approximately 7 x 10(-7) OMEGA-cm2) can be obtained if Ti thicknesses are larger than half of polysilicon thicknesses. This is due to the polysilicon layer had been consumed completely and the interfacial oxide would be broken under the silicidation process. This implies that the contact resistance is mainly determined by the polysilicon/mono-silicon interface property and it is necessary to eliminate the interfacial oxide for a good contact system.
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    IMPROVED IV-CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS WITH NOVEL DUAL-BUFFER DRAIN STRUCTURE
    (1994-01-01)
    YEH, CF
    ;
    CHERN, CH
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    ON/OFF current ratio of poly-Si TFTs has been improved by using a novel structure called the dual-buff er drain (DBD). The new DBD TFT not only reduces the anomalous off-current, but also maintains a high on-current. It mainly combines features of the double-gate and the field-induced drain structures, so that owns advantages of low electric field near the drain junction and good drain junction characteristics. Furthermore, it will be shown that the DBD TFT is superior in off-current stability to the FID TFT. Finally, we will discuss high voltage operation for the DBD TFT.
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    HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING
    (1995-10-26)
    LIOU, BW
    ;
    LEE, CL
    ;
    LEI, TF
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    A new Schottky diode structure which uses the p(+)-polycrystalline silicon (polysilicon) diffused guard ring is proposed. The diode gives nearly ideal J-V characteristics with a high reverse breakdown voltage (148V) and a low reverse leakage current density (8.4 mu A/cm(2)).