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A simple passive-alignment packaging technique for laser diode modules
(1998-10-01)
Wang, SC
;
Chi, S
;
Cheng, WH
;
光電工程研究所
;
Institute of EO Enginerring
A simple passive-alignment packaging technique has been developed for the fabrication of a laser diode connection to a singlemode fiber pigtail. The fabrication begins with a multimode fiber soldered in a U-groove with 5 mu m tolerance. Then the laser chip with a junction-up die-bond is passively aligned to a multimode fiber and converted into a singlemode fiber. The tolerance as measured for the multimode fiber at 10% loss of maximum coupling from the laser diode is 11 mu m. Because the tolerance of the multimode fiber from the laser chip is larger (11 mu m) than that of the fiber in the U-groove (5 mu m), this passive alignment is easily obtained. In contrast to other passive-alignment techniques, the advantages of this technique are that it is less sensitive to transverse misalignment and requires no complicated alignment marks. From laser to multimode fiber a coupling efficiency of greater than 80% and a bandwidth of greater than 1 GHz have been achieved. In this package, the overall coupling efficiency from laser to singlemode fiber is 16%, The resulting laser module with compact size and fewer components should make it highly suitable for use in low-cost telecommunication applications, (C) 1998 Elsevier Science S.A. All rights reserved.
A simple passive-alignment packaging technique for laser diode modules
(1998-10-01)
Wang, SC
;
Chi, S
;
Cheng, WH
;
光電工程學系
;
Department of Photonics
A simple passive-alignment packaging technique has been developed for the fabrication of a laser diode connection to a singlemode fiber pigtail. The fabrication begins with a multimode fiber soldered in a U-groove with 5 mu m tolerance. Then the laser chip with a junction-up die-bond is passively aligned to a multimode fiber and converted into a singlemode fiber. The tolerance as measured for the multimode fiber at 10% loss of maximum coupling from the laser diode is 11 mu m. Because the tolerance of the multimode fiber from the laser chip is larger (11 mu m) than that of the fiber in the U-groove (5 mu m), this passive alignment is easily obtained. In contrast to other passive-alignment techniques, the advantages of this technique are that it is less sensitive to transverse misalignment and requires no complicated alignment marks. From laser to multimode fiber a coupling efficiency of greater than 80% and a bandwidth of greater than 1 GHz have been achieved. In this package, the overall coupling efficiency from laser to singlemode fiber is 16%, The resulting laser module with compact size and fewer components should make it highly suitable for use in low-cost telecommunication applications, (C) 1998 Elsevier Science S.A. All rights reserved.
InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition
(2003-04-01)
Lu, TC
;
Tsai, JY
;
Chu, JT
;
Chang, YS
;
Wang, SC
Long-wavelength vertical cavity surface emitting lasers (VCSELs) are considered the best candidate for the future low-cost reliable light sources in fiber communications. However, the absence of high refractive index contrast in InP-lattice-matched materials impeded the development of 1.3-1.5 mum VCSELs. Although wafer fusions provided the alternative approaches to integrate the InP-based gain materials with the GaAs/AlAs materials for their inherent high refractive index contrast, the monolithic InP-based lattice-matched distributed Bragg reflectors (DBRs) are still highly attractive and desirable. In this report, we demonstrate InP/InGaAlAs DBRs with. larger refractive index contrast than InP/InGaAsP and InAlAs/InGaAlAs DBRs. The switching between InP and InGaAlAs layers and growth rate control have been done by careful growth interruption technique and accurate in situ optical monitoring in low-pressure metal organic chemical vapor deposition. A 35 pairs 1.55 mum centered InP/InGaAlAs DBRs has the stopband of more than 100 nut and the highest reflectivity of more than 99%. A VCSEL structure incorporating 3 5 pairs InP/InGaAlAs DBR as the bottom mirror combined with a 2lambda thick periodic gain cavity and 10 pairs SiO2/TiO2 top dielectric mirrors was fabricated. The VCSELs lased at 1.56 mum by optical pumping at room temperature with the threshold pumping power of 30 mW. (C) 2002 Elsevier Science B.V. All rights reserved.
MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength
(2004-01-19)
Kuo, HC
;
Chang, YS
;
Lin, CF
;
Lu, TC
;
Wang, SC
We present in this paper the metalorganic chemical vapor deposition growth and characterization of high-performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP/InGaP MQWs growth condition was optimized using photoluminescence. These VCSELs exhibit superior characteristics, with threshold currents similar to 0.4 mA, and slope efficiencies similar to 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than similar to 30% when the substrate temperature is raised from room temperature to 85degreesC. These VCSELs also demonstrate high-speed modulation bandwidth up to 12.5 Gbit/s from 25degreesC to 85degreesC. (C) 2003 Elsevier B.V. All rights reserved.
Single-mode 1.27-mu m InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
(2005-01-01)
Kuo, HC
;
Chang, YH
;
Chang, YA
;
Lai, FI
;
Chu, JT
The 1.27-mum InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current varies from 1.8 to 1.1 mA and the slope efficiency falls less than similar to35% from 0.17 to 0.11 mW/mA as the temperature is raised from room temperature to 75 degreesC. The VCSELs continuously operate up to 105 degreesC with a slope efficiency of 0.023 mW/mA. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is estimated to be 10.7 GHz(1/2) with modulation current efficiency factor of similar to5.25 GHz/(mA)(1/2). These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25degreesC to 70degreesC. We also accumulated life test data up to 1000 h at 70degreesC/10 mA.
Optical Mode Modulation of AlGaInP Multi Quantum Well Laser Diodes
(2013)
Hung, Chih-Tsang
;
Huang, Shen-Che
;
Lu, Tien-Chang
;
光電工程學系
;
Department of Photonics
We investigate the influence of passivation structure on the optical mode distribution and LI characteristics for the edge emitting AlGaInP-GaInP visible laser diode (LD). For traditional single-layer Si3N4 or SiO2 passivation designs, the modification of dielectric layer thickness can determinate the lateral near-field confinement and change the horizontal far-field (FF) divergence. By increasing the film thickness, the non-radiation absorption come from Au-Ti can be improved and it leads to a narrow FF divergence beam. As continue to increasing the thickness, thicker passivation provides a better confinement factor and then the far-field pattern turn to be wider. For LI characteristics, it is necessary to deposit a thick enough passivation to reduce metal absorption. However, it cause much thermal energy accumulated in the ridge waveguide and deteriorate the quantum efficiency as adopting a too thick dielectric layer. Finally, we demonstrate a high power AlGaInP-GaInP multi quantum wells (MQWs) LD adopted a high-reflectivity passivation to enhance the LI characteristics and keep a suitable far-field divergence angle simultaneously. Under the design of three-pair optical thin films, it cannot only avoid the metal absorption but also enhance emitting efficiency and heat dissipation by using a high reflective and good thermal conductive three-pair optical thin films, it cannot only avoid the metal absorption but also enhance emitting efficiency and heat dissipation by using a high reflective and good thermal conductive Al2O3/Ta2O5 multilayer. The measured room-temperature threshold current (I-th) and characteristic temperature (T-0) can be arrived 44.5mA and 104.2K at 16.4 degrees far-fielddivergence.
830-nm AlGaAs-InGaAs Graded Index Double Barrier Separate Confinement Heterostructures Laser Diodes With Improved Temperature and Divergence Characteristics
(2013-01-01)
Hung, Chih-Tsang
;
Lu, Tien-Chang
;
光電工程學系
;
Department of Photonics
The 830-nm AlGaAs/InGaAs laser diodes (LDs) adopting multistep-graded index double-barrier separate confinement heterostructures (GRIN-DBSCHs) with small divergence beams and improved temperature characteristics under a high-output-power operation are reported. The double-barrier separate confinement heterostructure (DBSCH) design provides good carrier confinement and prevents current leakage by adding a multistep grading layer between cladding and waveguide layers. Simultaneously, the DBSCH design can facilitate reducing the divergence angle at high-power operation and widening the transverse mode distribution to decrease the power density around emission facets. In addition, the p-side doping depth is optimized to effectively raise the barrier height for reducing the electron overflow. Gaussian-like narrow far-field patterns are measured with the full-width at half-maximum vertical divergence angle to be between 11 degrees and 13 degrees. A threshold current of 16.5 mA and a slop efficiency of 0.98 W/A are obtained in the continuous-wave operation condition at room temperature. The maxima optical power densities of 21.5 MW/cm(2) per laser facet and good characteristic temperature values of threshold current (T-0) and slope efficiency (T-1) are achieved.
High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength
(2005-03-01)
Kuo, HC
;
Chang, YH
;
Yao, HH
;
Chang, YA
;
Lai, FI
1.27-mum InGaAs: Sb-GaAs-GaAsP vertical-cavity surface-emitting lasers (VCSELs) were grown by metal-organic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than similar to35% as the temperature raised from room temperature to 70 degreesC. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is measured,to be 10.7 GHz with modulation current efficiency factor (MCEF) of similar to5.25 GHz/(mA)(1/2). These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25 degreesC to 70 degreesC.
10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths
(2005-04-01)
Chang, YH
;
Kuo, HC
;
Chang, YA
;
Chu, JT
;
Tsai, MY
InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) with 1.27 mu m emission wavelength were grown by metal-organic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than similar to 35% as the temperature is increased from room temperature to 70 degrees C. With a bias current of only 5 mA, the 3 dB modulation frequency response was measured to be 8.36GHz, which is appropriate for 10Gb/s operation. The maximal bandwidth is measured to be 10.7GHz With a modulation current efficiency factor (MCEF) of similar to 5.25 GHz/(mA) 1/2. Bit error rates of less than 10(-12) are demonstrated for 10 Gb/s data transmission from 25 degrees C to 70'C. We also accumulated life test data up to 1000 h at 70 degrees C/10 mA.
MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser
(2006-01-25)
Chang, YA
;
Chu, JT
;
Ko, CT
;
Kuo, HC
;
Lin, CF
In0.45Ga0.55As:Sb/GaAs (1.3 mu m) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In0.45Ga0.55As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 mu m with narrow fullwidth at half-maximum (FWHM) of 35.9meV. For the fabricated VCSEL with 5 mu m diameter oxide-confined aperture, a room-temperature (RT).threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 mu m emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz. (c) 2005 Elsevier B.V. All rights reserved.

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