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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    奈米級混合信號式電路技術---子計畫二：應用於奈米CMOS ICs之Gm-C類比濾波器設計技術(I)
    (2009)
    洪崇智
    ;
    HUNG CHUNG-CHIH
    ;
    國立交通大學電信工程學系(所)
    在現今進步的製程技術，CMOS 製程已經由深次微米朝向奈米技術的發展，由於 奈米技術的使用，短通道效應影響轉導放大器的線性度效能越來越明顯，而電晶體飽和 區的公式將會受到短通道效應的嚴重影響，因此許多由理想電流公式所衍伸出的傳統轉 導放大器架構在先進的製程中所受到的非理想效應，比起過去製程將會更多。同時在深 次微米的製程技術中，工作電壓也漸漸的下降，電晶體的臨界電壓值越來越小，這樣的 環境下，電路設計上面臨了許多的挑戰。在現今可攜式裝置中，低功率低消耗的特性要 求越來越高下，新製程下的設計與研發都具有相當的前瞻性以及發展性。 由於數位電路的盛行以及電腦輔助工具的成熟，CMOS 元件的電子特性針對了數位 電路的使用達到最佳化的設計。當我們使用的元件達到奈米的階級，數位電路的整體效 能將不會受到影響而被降低，但對於類比電路而言，所需維持的效能諸如：增益、頻寬、 動態範圍以及線性度將會受到很大的影響。因此我們必須針對奈米製程發展適當的類比 電路架構。除此之外，隨著高位元速度的應用需求，類比電路將必須工作於較高的速度 以符合所需，同時其效能必須維持在同樣的水準。 在本計畫中，我們將以奈米CMOS 技術來研究並設計GM-C 濾波器。首先，我們 將以CMOS 技術設計轉導放大器，此放大器將使用電流回授技巧，以做為操作於寬頻 濾波器的基本方塊。由於短通道效應的產生，電晶體的電流與電壓不呈現線性的關係， 設計一個寬頻且線性的運算轉導放大器將會是一個很大的挑戰。經由規格的考量與電路 架構的選定，我們將能設計出所要求的濾波器。最後，我們將依照電路特性做進一步之 調整與建檔，以做為接下來奈米製程之設計考量。 在我們的研究當中，我們的目標為轉導放大器以及轉導電容式濾波器。轉導放大器 為一基本的電路元件方塊，其功能為線性的轉換輸入電壓至輸出電流，此放大器可用於 乘法器、壓控震盪器、轉導電容式濾波器以及連續時間三角積分調變器。在此計畫當中， 我們將所設計的轉導放大器使用於轉導電容式濾波器，並期望此濾波器能適用於無線以 及有線的傳輸系統當中，同時我們將使用奈米製程來設計所需的電路。於第一年將使用 65nm 的製程設計工作於80MHz 速度的轉導放大器與濾波器，同時此電路能達到-70dB 的線性度。接著我們在第二年使用45nm 的製程來設計高速電路，此電路將可工作於 250MHz 的速度並達到-60dB 的線性度。在最後的一年內，我們將使用32nm 的製程來 設計高速與高線性度的電路，此電路將工作於1GHz 的速度並將達到-60dB 的線性度。 因此，本計畫的執行將能實現出寬頻線性濾波電路，並藉由製程的進步以創新的觀 念設計更新穎的電路架構，期許能以不同的方式開創出前瞻性濾波電路，再以此架構為 藍本與其他分項子計畫做進一步之整合，以達到系統整體之最佳化。
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    Hot-carrier effects on power characteristics of SiGeHBTs
    (2004-06-01)
    Huang, SY
    ;
    Chen, KM
    ;
    Huang, GW
    ;
    Tseng, HC
    ;
    Hsu, TL
    This letter investigates hot-carrier (HQ effects on the power characteristics of Si-SiGe HBTs using load-pull measurements. We found that the output power, power gain, and linearity of Si-SiGe HBTs are degraded after HC stress. Under constant base-current measurement, the HC-induced power performance degradation is found to be much worse than that under constant collector-current measurement. The HC effects on the cutoff frequency, nonlinearity terms of base-current and collector-current, and third-order intermodulation (IM3) cancellation effect have been analyzed to explain the experimental observations.
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    Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE
    (2014-04-01)
    Mukhopadhyay, Partha
    ;
    Bag, Ankush
    ;
    Gomes, Umesh
    ;
    Banerjee, Utsav
    ;
    Ghosh, Saptarsi
    A comparative assessment of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on silicon and sapphire substrates has been carried out. Large-area power GaN HEMTs with identical device dimensions were fabricated on both substrates. A thicker AlN buffer layer was used for the GaN HEMT on silicon to achieve similar quality and uniformity of GaN epitaxy for rational comparison with that grown on sapphire. Direct-current analysis and physical characterization were carried out to understand the performance of the devices. Mathematical measurement of the instability of the current-voltage (I-V) characteristic at high applied drain bias was carried out to evaluate the performance of both devices. An improved two-dimensional (2D) analysis of the I-V characteristic was performed from a thermal perspective including appropriate scattering effects on the 2D electron gas mobility. The experimental and analytical studies were correlated to reveal the effects of temperature-sensitive scattering phenomena on the mobility as well as on the I-V characteristic at high drain bias in terms of lattice thermal heating. It is observed that the HEMT on Si has improved stability compared with sapphire due to its weaker scattering phenomena at high drain bias, associated with its thermal conductivity. Simulation of 2D thermal mapping was also carried out to distinguish the hot-spot regions of the devices. The comparable electrical performance of these devices illustrates the viability of AlGaN/GaN HEMTs on Si(111) to achieve low-cost stable devices with better thermal power handling for high-voltage applications.
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    Impact of hot carrier stress on RF power characteristics of MOSFETs
    (2005)
    Huang, SY
    ;
    Chen, KM
    ;
    Huang, GW
    ;
    Yang, DY
    ;
    Chang, CY
    This paper investigates hot-carrier (HQ effects on the RF power and linearity characteristics of MOS transistors using load-pull measurement. We found that the RF power characteristics are affected by the HC stress, and the linearity of MOS transistors is clearly degraded after HC stress at constant gate voltage measurement. However, at high gate voltage bias, the HC-induced power degradation is much reduced compared with that under low gate voltage regimes. In addition, HC effects on linearity can be softened by biasing the transistor at constant drain currents. These experimental observations can be explained by the change of threshold voltage, transconductance, subthreshold swing, and mobility degradation coefficient under HC stress.
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    Linearity improvement for power MESFET devices using source inductive feedback and input impedance mismatch
    (2005)
    Meng, CC
    ;
    Wang, W
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    Linearity can be improved drastically by sacrificing power gain with the same output power. GaAs MESFET devices with source-via-hole ground and with source-bond-wire ground are used to investigate the effect of source inductive feedback and input impedance mismatch on the effect of linearity. The output matching for all the devices are tuned for the maximum power condition. At 2.4 GHz, the device without source-bond-wire ground and input impedance mismatched has the highest linearity, OIP3=50 dBm, gain=13.5 dB gain and P-1dB=29 dBm while the device with source-via-hole ground and input impedance matched has the lowest linearity OIP3=40 dBm, 18.3 dB gain and P-IdB=29 dBm.
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    Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
    (2005-06-01)
    Huang, SY
    ;
    Chen, KM
    ;
    Huang, GW
    ;
    Liang, V
    ;
    Tseng, HC
    Hot-carrier (HC) effects on high-frequency and RF power characteristics of Si/SiGe HBTs are investigated in this paper. By using the two-tone load-pull measurement, we find that not only the cutoff frequency, but also the output power performances of Si/SiGe HBTs are suffered by the HC stress. In this work, S-parameters and intrinsic elements of an equivalent hybrid-pi model were used to validate the HC effects on high-frequency characteristics. With different bias conditions, the degradations of cutoff frequency, power gain, and linearity are found to be worse under constant base-current measurement than that under constant collector-current measurement. The HC-induced degradations on the current gain, transconductance, and ideality-factor of base and collector currents are analyzed to explain the experimental observations.
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    Linearity and power characteristics of SiGeHBTs at high temperatures for RF applications
    (2005-07-01)
    Chen, KM
    ;
    Peng, AS
    ;
    Huang, GW
    ;
    Chen, HY
    ;
    Huang, SY
    In this paper, the power gain, power-added efficiency (PAE) and linearity of power SiGe heterojunction-bipolar transistors at various temperatures have been presented. The power characteristics were measured using a two-tone load-pull system. For transistors biased with fixed base voltage, the small-signal power gain and PAE of the devices increase with increasing temperature at low base voltages, while they decrease at high base voltages. Besides, the linearity is improved at high temperature for all voltage biases. However, for devices with fixed collector current, the small-signal power gain, PAE, and linearity are nearly unchanged with temperature. The temperature dependence of power and linearity characteristics can be understood by analyzing the cutoff frequency, the collector current, Kirk effect and nonlinearities of transconductance at different temperatures.
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    High-linear-power MESFET devices using source-degeneration inductance and input-impedance mismatch
    (2006-05-01)
    Meng, CC
    ;
    Wang, W
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    Linearity can be improved drastically by sacrificing power gain with the same output power. GaAs MESFET devices with via-hole ground and with bond-wire ground are used to investigate the effect of source-inductive feedback and input-impedance mismatch on the effect of linearm. At 2.4 GHz the device without bond-wire ground and mismatched input impedance has the highest linearity OIP3 = 50 dBm, gain = 13.5 dB gain, and P-tdB = 29 dBm, while the device with via-hole ground and inatched input impedance has the lowest linearity OIP3 = 40 dBm, 18.3 dB gain, and P-tdB = 29 dBm. (c) 2006 Wiley Periodicals, Inc.
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    Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs
    (2006-07-01)
    Lin, YC
    ;
    Chang, EY
    ;
    Yamaguchi, H
    ;
    Hirayama, Y
    ;
    Chang, XY
    The uniformly doped and the delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic high-electron mobility transistors (MHEMTs) were fabricated, and the dc characteristics and the third-order intercept point (IP3) of these devices were measured and compared. Due to more uniform electron distribution in the quantum-well region, the uniformly doped MHEMT exhibits a flatter transconductance (G(m)) versus drain-to-source current (I-DS) curve and much better linearity with higher IP3 and higher IP3-to-P-dc. ratio as compared to the delta-doped MHEMT, even though the delta-doped device exhibits higher peak transconductance. As a result, the uniformly doped MHEMT is more suitable for communication systems that require high linearity operation.
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    A Comprehensive Investigation of Analog Performance for Uniaxial Strained PMOSFETs
    (2009-02-01)
    Kuo, Jack Jyun-Yan
    ;
    Chen, William Po-Nien
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This paper presents a comprehensive investigation of the analog performance for uniaxial strained PMOSFETs with sub-100 nm gate length. Through a comparison between co-processed strained and unstrained devices regarding important analog metrics such as transconductance to drain current ratio (g(m)/I(d)), dc gain, linearity, low-frequency noise, and device mismatch, the impact of process-induced uniaxial strain on the analog performance of MOS devices has been assessed and analyzed. Our results indicate that, although the drain current noise spectral density and drain current mismatch of the strained device under low gate voltage overdrive are increased because of the larger gate-bias sensitivity of carrier mobility, the strained device has almost the same low frequency and mismatch performance as the unstrained one at a given g(m)/I(d). This paper may provide insights for analog design using advanced strained devices.