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Subject: search.filters.subject.micromixer

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Now showing 1 - 10 of 14
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    A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7-Ghz multiband WLAN applications
    (2004-10-05)
    Wang, CY
    ;
    Lu, SS
    ;
    Meng, CC
    ;
    Lin, YS
    ;
    電信工程研究所
    A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7-GHz multiband WLAN applications is demonstrated. Our experimental results show that the input return loss |S-11| is below -25 dB from DC to 10 GHz with power-conversion gains of 11.7, 11.9, and 11.5 dB at frequencies of 2.4, 5.2, and 5.7 GHz, respectively. The wideband matching characteristic makes the micromixer very suitable for multiband applications. Input P-IdB is -4 dBm and IIP3 is 2.36 dBm. Port-to-port isolation is also quite satisfactory. In addition, the single-to-differential input stage in the Gilbert micromixer eliminates the need for common-mode rejection. (C) 2004 Wiley Periodicals, Inc.
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    Broadband Gilbert micromixer with an LO Marchand balun and a TIA output buffer
    (2006)
    Tseng, Sheng-Che
    ;
    Meng, Chinchun
    ;
    Chang, Chia-Hung
    ;
    Wu, Chih-Kai
    ;
    Hung, Guo-Wei
    A single-ended wideband downeonversion Gilbert micromixer is demonstrated in this paper using 0.35-um SiGe BiCMOS technology. Because of the wideband matching property of the micromixer, it can perform broad frequency translation. The TIA is utilized in the IF stage while a broadband Marchand balun is employed not only to generate differential LO signals but also to reserve the wideband operation of the mixer. This singleended wideband mixer has the conversion gain of 15 dB, IP(1dB) of 17 dBm, and IIP(3) of -6.5 dBm and works from 3.5 to 14.5 GHz. The input return loss is below -14 dB and the chip size is 1x1 mm(2).
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    Gilbert Mixers With Microwave Quadrature/Differential Generators: An Approach for Millimeter-Wave IC
    (2009)
    Meng, Chinchun
    ;
    Tseng, Sheng-Che
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    Several microwave passive components can be integrated with active circuits in standard silicon processes for millimeter-wave applications. Passive components such as Marchand baluns, quadrature couplers, and rat-race hybrids are directly implemented on a standard low-resistivity (similar to 10 Omega xcm) silicon substrate for size compactness because of the high dielectric constant. New circuit design concepts such as balanced path loss and distortionless transmission lines are applied to tolerate the unavoidable loss and to maintain the functionality of components.
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    The port-to-port isolation of the downconversion P-type micromixer using different N-well topologies
    (2006-04-01)
    Tseng, SC
    ;
    Meng, CC
    ;
    Li, YH
    ;
    Huang, GW
    ;
    電信工程研究所
    The port-to-port isolation of the micromixer is studied using three different p-type downconversion micromixers in 0.35-mu m CMOS technology. Both the body effect and the well isolation influence the port-to-port isolation significantly. The body effect degrades the LO-to-RF isolation and also deteriorates the LO-to-RF isolation. Without the well isolation, the LO-to-RF isolation drops. However, the RF-to-IF isolation is independent of the body effect and well isolation. The p-type micromixer with a separate N-well and without body effect has the best port-to-port isolation properties; its LO-to-IF, LO-to-RF, and RF-to-IF isolations are -59 dB, -58 dB, and -30 dB, respectively.
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    SiGe HBT Gilbert downconverter with an integrated miniaturized Marchand balun for UWB applications
    (2007)
    Tseng, Sheng-Che
    ;
    Meng, Chinchun
    ;
    Chang, Chia-Hung
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    A 15.5-dB conversion gain 0.35-mu m SiGe HBT Gilbert mixer with the lumped-element Marchand balun for 3.1 GHz to 10.6 GHz UWB applications is implemented using standard silicon processes. This mixer has the 1.5-GHz IF 3-dB bandwidth as well as the 15.8-dB noise figure. The balun size is only 0.25 mm x 0.5 mm. Because of the balanced structure of the Marchand balun, the magnitude imbalance and phase difference of outputs are below 1 dB and about 184 degrees, respectively. In the present of a lossy substrate, the dissipated loss of the balun is still less than 4 dB thanks to the advantage of the lumped-element technique. The total current consumption of the entire mixer is 13.9 mA at 5 V voltage supply while the chip size including probing pads is 1 mm x 0.9 mm.
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    A 2.4, 5.2, and 5.7 GHz CMFB gilbert downconverter with low-voltage cascode current mirror input stage
    (2006-11-01)
    Tseng, Sheng-Che
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A triple-band (2.4, 5.2, and 5.7 GHz) CMFB downconversion micromixer with a low-voltage cascode current mirror RF input stage has been demonstrated by the 0.18-mu m CMOS technology in this letter. Micromixer has a single-ended RF input stage, the CMFB topology is adopted to improve the conversion gain, and a differential-to-single output buffer is used to convert the differential output of the mixer into a single-ended output. The fully integrated downconversion micromixer has the conversion gain of 12 dB, LO-to-IF isolation of 43 dB, LO-to-RF isolation of 48 dB, and RF-to-IF isolation of 18 dB at 2.4 GHz. The mixer has the conversion gain of 7.5 dB, LO-to-IF isolation of 54 dB, LO-to-RF isolation of 49.5 dB, and RF-to-IF isolation of 25 dB at 5.7 GHz. The total quiescent current consumption of the circuit is 7.6 mA. (c) 2006 Wiley Periodicals, Inc.
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    Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology
    (2007)
    Wu, Tzung-Han
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A GaInP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.
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    Monolithic broadband Gilbert micromixer with an integrated Marchand balun using standard silicon IC process
    (2006-12-01)
    Tseng, Sheng-Che
    ;
    Meng, Chinchun
    ;
    Chang, Chia-Hung
    ;
    Wu, Chih-Kai
    ;
    Huang, Guo-Wei
    A single-ended wideband downconversion Gilbert micromixer is demonstrated in this paper using 0.35-mu m SiGe BiCMOS technology. A transimpedance amplifier with resistive feedback is utilized in the IF stage while a broadband Marchand balun is employed to generate wideband differential local oscillator signals. The planar Marchand balun topology employed in this paper can generate truly balanced signals even in the presence of the lossy low-resistivity (similar to 10 Omega (.) cm) silicon substrate. A systematic approach to measure the frequency response of each individual stage in a Gilbert mixer is developed in this paper. This single-ended wideband mixer has the conversion gain of 15 dB, IP1dB of -19 dBm, IIP3 of -7 dBm, and the noise figure of 13 dB. The mixer works from 3.5 to 14.5 GHz.
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    10-GHz highly symmetrical sub-harmonic Gilbert mixer using GaInP/GaAs HBT technology
    (2007-05-01)
    Wu, Tzung-Han
    ;
    Meng, Chinchun
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A 10-GHz sub-harmonic Gilbert mixer is demonstrated using GaInP/GaAs hetero-junction bipolar transistor technology. The local oscillator (LO) signal time-delay path in the sub-harmonic LO stage is compensated using the fully symmetrical stacked-LO doubler; therefore, the balance of the sub-harmonic LO stage, the radio frequency to intermediate frequency isolation, and IIP2 are improved. The demonstrated 10-GHz sub-harmonic mixer achieves 10 dB conversion gain, IP1dB of -12 dBm, IIP3 of 2 dBm and IIP2 of 33 dBm.
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    GaInP/GaAs HB broadband inductorless receiver
    (2008-01-01)
    Wu, Tzung-Han
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A GaInP/GaAs HBT broadband RF front-end consisting of a low-noise wideband amplifier and a micromixer is demonstrated in this article. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth. (c) 2007 Wiley Periodicals, Inc.