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Optical Properties of Patterned InN in Photodetection Devices
(2018-01-01)
Hsu, Lung-Hsing
;
Cheng, Yuh-Jen
;
Yu, Peichen
;
Kuo, Hao-Chung
;
Lin, Chien-Chung
InN selective-area-growth on patterned GaN templates was employed by nano-imprint lithography and LP-MOCVD epitaxy. ITO rods were deposited by oblique-angle electron beam evaporation. The X-ray diffraction patterns provide the hexagonal orientation of patterned InN crystals. The broad band signal and peak energy blue-shift phenomenon due to higher Fermi-level to acceptor emission were investigated by photoluminescence (PL). The Raman-shifts characterized the high-quality patterned InN growth. InN nanostructures/ITO rods enhanced broadband and angle-independent anti-reflection. It was demonstrated with near-infrared response by a tunable laser illumination (1470 similar to 1580nm), and the portion photocurrent (920 nm long pass) exhibits 33% measured via AM1.5G solar simulated spectra.
Electronic reconstruction at a buried ionic-covalent interface driven by surface reactions
(2009-11-01)
Lou, C. -T.
;
Li, H. -D.
;
Chung, J. -Y.
;
Lin, D. -S.
;
Chiang, T. -C.
Lattice-matched ionic NaCl films were grown layer by layer on covalent Ge(100) using cycles of two half reactions (HRs) that involved the alternative adsorption of Cl and Na. The Ge 3d photoemission spectra obtained after full cycles of growth resembled that of clean Ge(100), but came to resemble that of the polar Cl-terminated surface after the subsequent half reaction of Cl adsorption. Concurrently, the Na and Cl core levels of the nanofilms shifted by similar to 1.7 eV between these two interface configurations. Our results demonstrate that reactions on the NaCl surface drive periodic electronic reconstructions at the NaCl-Ge interface.
Enhanced Photoresponse of InN Devices Using Indium-Tin Oxide Nanorods
(2017-01-01)
Hsu, Lung-Hsing
;
Cheng, Yuh-Jen
;
Yu, Peichen
;
Kuo, Hao-Chung
;
Lin, Chien-Chung
Enhanced infrared photoresponse is observed in InN/ITO rods fabricated by LP-MOCVD and oblique-angle electron beam evaporation. The higher growth temperature and more V/III could trend toward hexagonal InN pillars epitaxy. The peak energy blue-shift phenomenon due to higher Fermilevel to acceptor emission was investigated by temperature dependent photoluminescence (PL) measurements. ITO nanorods enhanced the broadband and angle-independent anti-reflection in the range between 400 nm and 2000 nm. The InN/ITO rods photodetection device was demonstrated with enhanced IR response, and the portion photocurrent (610 nm long pass) of InN detection as high as 24.5% measured via AM1.5G solar simulated spectra.
Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi2 Nanocrystals Nonvolatile Memory
(2010-01-01)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chen, Yang-Dong
;
Lin, Chao-Cheng
In this work, nitric acid oxidation was studied to fabricate the tunneling oxide of nanocrystal memory devices. SiO2 about 4 nm thick was formed through oxidizing the sputtered Si film by immersing in nitric acid solution (HNO3:H2O=1:10) for 60 s. After oxide formation, a rapid thermal annealing process set at 700 degrees C for 30 s was used to improve oxide quality. In addition, the formed SiO2 film was analyzed by X-ray photoelectron, capacitance-voltage, and current density-voltage measurements to study the process of the nitric acid oxidation. After the investigation of the nitric acid oxidized SiO2, a 6 nm thick cobalt silicide thin film was deposited and aggregated on the formed SiO2 layer as the charge-trapping layer. The cobalt silicide nanocrystal memory device showed an obvious memory effect and good reliability, which confirms that the nitric acid oxidation method has potential for memory application.
Electrical characteristics of an organic bistable device using an Al/Alq(3)/nanostructured MoO3/Alq(3)/p(+)-Si structure
(2010-01-25)
Chang, Tzu-Yueh
;
Cheng, You-Wei
;
Lee, Po-Tsung
;
光電工程學系
;
顯示科技研究所
The electrical properties of a device with an Al/Alq(3)/nanostructured MoO3/Alq(3)/p(+)-Si structure were investigated for organic resistance switching memories. The conductance of the device can be electrically switched to either high conductance or low conductance. The bistable switching of the device is attributed to the MoO3 nanoclusterlike layer interposed between the Alq(3) thin films. When the device was switched to high conductance, a space-charge field dominated carrier transportation of the device. The space-charge field was resulted from charges trapped in the MoO3 nanoclusterlike layer. Both retention measurement and write-read-erase-read cycles of the device are also provided.
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device Application
(2010-01-01)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Huang, Yu-Hao
;
Lin, Chao-Cheng
We propose a method to fabricate a Ni nanocrystal structure by simultaneously coevaporating Ni and SiO2 pellets. An 800 degrees C rapid thermal annealing was used to enhance the Ni nanocrystals to aggregate. Transmission electron microscopy indicates that the formed Ni nanocrystals show a high density distribution of about 4.5x10(12) cm(-2). Then, the memory device using the Ni nanocrystals as charge-trapping centers was fabricated. The Ni nanocrystal memory device has an obvious memory window under capacitance-voltage measurement. X-ray photoelectron spectroscopy confirms the memory effect results from the Ni nanocrystals embedded in the SiO2 dielectric layer. Moreover, related reliability characteristics have been extracted.
InN Nanopillar Devices with Strong Photoresponse
(2016-01-01)
Hsu, Lung-Hsing
;
Kuo, Chien-Ting
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Cheng, Yuh-Jen
;
Chen, Kuan-Chao
;
Kuo, Hao-Chung
The InN pillars/p-GaN is promising for extended visible and infrared absorption. The higher growth temperature and more V/III could trend toward hexagonal InN pillars epitaxy, fabricated by a low-pressure metal organic chemical vapor deposition. The tensile strain effect and the peak energy blue-shift phenomenon due to higher Fermi-level to acceptor emission were investigated via Raman and photoluminescence (PL) measurements. The high quality InN pillars reveal no indium droplets by X-ray diffraction pattern. A InN pillars photodetection device is demonstrated with extended IR response, and the portion photocurrent of InN detection as high as 13% measured via AM1.5G solar simulated spectra.
Broadband and omnidirectional antireflection from conductive indium-tin-oxide nanocolumns prepared by glancing-angle deposition with nitrogen (Retracted article. See vol. 104, 269901, 2014)
(2009-02-02)
Chang, C. H.
;
Yu, Peichen
;
Yang, C. S.
;
光電工程學系
;
Department of Photonics
Characteristic formation of highly oriented indium-tin-oxide (ITO) nanocolumns is demonstrated using electron-beam evaporation with an obliquely incident nitrogen flux. The nanocolumn material exhibits broadband and omnidirectional antireflective characteristics up to an incidence angle of 70 degrees for the 350-900 nm wavelength range for both s- and p-polarizations. Calculations based on a rigorous coupled-wave analysis indicate that the superior antireflection arises from the tapered column profiles which collectively function as a gradient-index layer. Since the nanocolumns have a preferential growth direction which follows the incident vapor flux, the azimuthal and polarization dependence of reflectivities are also investigated. The single ITO nanocolumn layer can function as antireflection contacts for light emitting diodes and solar cells.
Optical Properties of InN-Based Photo detection Devices
(2015)
Hsu, Lung-Hsing
;
Lin, Chien-Chung
;
Hwang, Yi-Chia
;
Su, Chen-Fung
;
Lin, Shih-Yen
The InN capped with GaN structures is promising for extended visible and infrared absorption. The low growth temperature of GaN/InN epitaxy was fabricated by a low-pressure metal organic chemical vapor deposition system. The strain effect and mixed InxGa1-xN complex of the GaN/InN layer were investigated via Raman and photoluminescence (PL) measurements. The capping GaN with similar growth temperature of previous InN growth induces the gallium diffusion mechanism to form InxGa1-xN complex. The blue-shift phenomenon of multiple GaN/InN peaks with increasing growth temperature was attributed to residual strain and higher Ga content of InGaN. A ZnO/GaN/InN photodetection device is demonstrated with extended IR response, and the quantum efficiency is 2.28%.
Embedded InN Dot-Like Structures with Modulating Growth Temperature in Nitride-Based Solar Cell
(2014-01-01)
Hsu, Lung-Hsing
;
Lin, Chien-Chung
;
Han, Hau-Vei
;
Lin, Da-Wei
;
Kuo, Hao-Chung
The embedded InN dot-like structures within nitride-based solar cells is promising for extended visible and infrared absorption of solar spectrum. The temperature dependent InN epitaxial growth was demonstrated in a low-pressure metal organic chemical vapor deposition (MOCVD) system and the absorption coefficient of fabricated InN-dots was measured and integrated into APSYS (R) simulation platform. The dimension-quantization effect of the InN dot-like layer was investigated via photoluminescence (PL) measurements. Higher growth temperature region induces multiple PL peaks and blue-shift phenomenon, which could be attributed to variations in size and composition. The extracted absorption coefficients of InN-dot-like layer can be used to calculate the conversion efficiency of 2.34% for the corresponding GaN-based solar cell design.

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