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Now showing 1 - 10 of 29
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    Morphological, Material, and Optical Properties of ZnO/ZnS/CNTs Nanocomposites on SiO(2)Substrate
    (2020-08-01)
    Tsai, Yu Sheng
    ;
    Lin, Xin Dai
    ;
    Chan, Wei Lun
    ;
    Tsai, Shang Che
    ;
    Liao, Wei Jen
    Ultraviolet A light (UV-A, 320-400 nm), which is unblockable by sunscreen, requires careful detection for disease avoidance. In this study, we propose a novel photosensing device capable of detecting UV-A. Cancer-causing UV light can be simultaneously monitored with tiny rapid response sensors for a high carrier transition speed. In our research, a multifunctional ZnO/ZnS nanomaterial hybrid-sprinkled carbon nanotube (CNT) was created for the purpose of fabricating a multipurpose, semiconductorbased application. For our research, ZnO nanorods (NRs) were grown by using a facile hydrothermal method on SiO(2)substrate, then vulcanized to form ZnO/ZnS coreshell nanorods, which were sprinkled with carbon nanotubes (CNTs). Results indicate that SiO2/ZnO/ZnS/CNT structures exhibited a stronger conducting current with and without light than those samples without CNTs. Multiple material characterizations of the nanostructures, including of atomic force microscopy (AFM) surface morphology evaluation, scanning electron microscopy (SEM), and transmission electron microscopy (TEM) indicate that CNTs could be successfully spread on top of the ZnO/ZnS coreshell structures. Furthermore, chemical binding properties, material crystallinity, and optical properties were examined by X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), and photoluminescence (PL). Owing to their compact size, simple fabrication, and low cost, ZnO/ZnS coreshell NRs/CNT/SiO2-based nanocomposites are promising for future industrial optoelectronic applications.
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    Optical, magneto-optical and holographic study of Bi4Ge3O12 crystals doped with transition elements
    (2006-01-01)
    Petkova, Petya
    ;
    Marinova, Vera
    ;
    Iliev, Ilia
    ;
    Dimov, Todor
    ;
    Lin, Shiuan H.
    Bismuth germanate Bi3Ge4O12 (BGO) single crystals doped with ruthenium, manganese and ruthenium plus manganese are gown by Czohralski technique with automatically diameter-weight control method. The effect of doping on the light-induced, magneto-optical and holographic properties of BGO single crystals is studied. It was found that the optical transmission spectrum of doped samples is modified strongly under thermal annealing and homogeneous illumination with UV light as well as the photochromic effect is fully reversible. The magneto-optical rotation was measured and Verdet constant was calculated at visible spectral range. Holographic grating are successfully recorded at 633 nm.
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    The influence of Rh doping on the light-induced properties of Bi4Ge3O12 single crystals
    (2009-01-01)
    Marinova, V.
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    Petrova, D.
    ;
    Lin, S. H.
    ;
    Hsieh, M. L.
    ;
    Hsu, K. Y.
    The influence of different doping concentrations of rhodium on the light-induced and holographic properties of BGO crystal is investigated. It is found that Rh addition generates sufficient density of traps for photoinduced charge carriers such that holographic gratings are successfully recorded in the blue-green spectral range. The measured steady state diffraction efficiency at 514 nm is 0.14%, which corresponds to a refractive index modulation of Delta n similar to 1.5 x 10(-6) for higher Rh concentration. A photochromic effect and nonlinear dependence of photoconductivity on light intensity are observed indicating deep level and shallow level contributions to the charge transport mechanism of Rh-doped BGO.
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    Deposition of indium tin oxide films on polycarbonate substrates by radio-frequency magnetron sputtering
    (1997-04-20)
    Wu, WF
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    Chiou, BS
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Indium tin oxide (ITO) films have been deposited onto polycarbonate (PC) substrates by radio frequency (rf) magnetron sputtering. The influence of the oxygen content during sputtering on the film morphology, and the electrical and optical properties of the films have been investigated. Both the refractive index and the extinction coefficient decrease with increasing oxygen content. In this study, the figures of merit T-10/R-sh of the films are higher than those for low-temperature sputtered films reported in the literature. (C) 1997 Elsevier Science S.A.
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    Light-induced and holographic properties of ruthenium and manganese co-doped Bi4Ge3O12 crystals
    (2010-07-01)
    Lin, S. H.
    ;
    Marinova, V.
    ;
    Lin, Y. C.
    ;
    Petrova, D.
    ;
    Chou, W. C.
    The effect of Ru + Mn co-doping on the light-induced properties of Bi4Ge3O12 (BGO) crystals is studied and compared with single Ru- and Mn-doped crystals. Optical absorption spectra of Ru + Mn co-doped crystal demonstrates a photosensitivity shift to the visible spectral range. In addition, a strong photochromic effect, being fully reversible by thermal annealing is observed. It is verified by photoluminescence emission that charge traps could be manipulated under ultraviolet (UV) excitation, as the photoluminescence intensity decreases revealing the existence of the state filling effect. Ru + Mn doping leads to a faster response time during holographic recording at 633 nm and a prolonged read-out process, especially after a preliminary exposure to UV light. The ability to modify the defect structure and corresponding absorption bands suggests the future potential for optical fixing using a two-step sensitization method.
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    GaSe1-xSx Crystals for Teraherz Frequency Range
    (2009)
    Atuchin, Victor V.
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    Andreev, Yury M.
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    Sarkisov, Sergei Yu.
    ;
    Morozov, A. N.
    ;
    Luo, C. -W.
    GaSe1-xSx single crystals has been grown by Bridgman-Stockbarger technique. Structural quality has been evaluated with TEM observation. Terahertz time-domain spectroscopy has been applied for measurements of the frequency-dependent optical constant of doped GaSe crystals as a function of s-content.
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    Structure-related optical properties of rapid thermally annealed Ba0.7Sr0.3TiO3 thin films
    (1999-11-01)
    Kuo, YF
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    Tseng, TY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Polycrystalline thin films of Ba0.7Sr0.3TiO3 (BST) are deposited on SiO2/Si substrates by radio frequency magnetron sputtering. This work also examines how the O-2 atmosphere annealing temperature affects not only the crystalline and morphological properties, but also the refractive index and the optical band gap energy. The BST films possess the highest dense packing growth and near-bulk optical properties as the O-2 atmosphere annealing temperature increases. Analysis results indicate that the packing density and the refractive index of BST films increase as the annealing temperature increases, whereas the optical band gap energies apparently decreased. In addition, the dispersion of the refractive index is analyzed in terms of dispersion parameters using the single oscillator dispersion model of Wemple and DiDomentico. (C) 1999 Elsevier Science S.A. All rights reserved.
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    Optical and electrical investigations of isoelectronic In-doped GaN films
    (2000)
    Shu, CK
    ;
    Lee, WH
    ;
    Pan, YC
    ;
    Chen, CC
    ;
    Lin, HC
    The optical and electrical properties of isoelectronic In-doped GaN films grown by metalorganic vapor phase epitaxy (MOVPE) were investigated by X-ray, photoluminescence (PL), Hall and Raman measurements. As a result, adequate In-doping quantity causes not only a reduction of yellow luminescence and unintentional background concentration, but an enhanced mobility and decrease in the widths. The improved crystalline and optical qualities of GaN films may be attributed to the decrease in defects. (C) 2000 Elsevier Science Ltd. All rights reserved.
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    Carrier-carrier scattering: an experimental comparison of 5 and 3 nm AlxGa1-xAs/GaAs quantum wells
    (2000)
    Sun, KW
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    Sun, CK
    ;
    Wang, JC
    ;
    Wang, SY
    ;
    Lee, CP
    We have studied carrier dynamics among highly nonequilibrium carrier distributions generated with femtosecond laser pulses in Be:AlxGa1-xAs/GaAs quantum wells with different well width at hot carrier densities between 10(9) and 10(11) cm(-2). The spectra, at moderately high densities (greater than or equal to 10(10) cm(-2)) indicate that the initially narrow electron distribution is altered in a time less than or equal to the LO-phonon emission time, as a result of rapid carrier-carrier scattering. At an excitation density of about 10(10) cm(-2), the carrier-carrier scattering rate is faster in narrower quantum wells. By measuring the intensity of the unrelaxed peak, it is possible to determine the relative rates of carrier-carrier scattering and LO-phonon emission. Our results indicate that carrier-carrier scattering becomes as significant as LO-phonon emission at a density of about 1 x 10(10) cm(-2) in the 5 nm quantum wells. (C) 2000 Elsevier Science Ltd. All rights reserved.
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    Study of linear and nonlinear optical properties of distorted Ti-O-6 perovskite structure in BaxSr1-xTiO3
    (2000-06-01)
    Chen, WK
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    Cheng, CM
    ;
    Huang, JY
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    Hsieh, WF
    ;
    Tseng, TY
    We report the linear and nonlinear optical properties of sol-gel prepared BaxSr1-xTiO3 (BST) crystalline powders. The results from powder X-ray diffraction, birefringence, and second-order optical nonlinearity measurements indicate that the paraelectric-ferroelectric phase transition of Ba0.75Sr0.25TiO3 occurs near room temperature. The second-order optical nonlinearity of the ferroelectric BST is about 7.9 pm/V. The index of refraction, n = 2.2, and birefringence, Delta n(B) similar to 0.05, are also appropriate for practical nonlinear optical applications. (C) 2000 Elsevier Science Ltd. All rights reserved.