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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Subject: search.filters.subject.silicon compounds

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Now showing 1 - 10 of 20
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    Scaling down of cobalt quantum-dots by colloidal route for non-volatile memory device application
    (2019-10-23)
    Yadav, Manoj
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    Velampati, Ravi Shankar R.
    ;
    Mandal, Debaprasad
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    電子工程學系及電子研究所
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    Department of Electronics Engineering and Institute of Electronics
    The present work details the synthesis of cobalt quantum-dots (Co QDs) with size downscaling to 1-2 nm and their applications in non-volatile memory (NVM) devices. The process of colloidal synthesis is simple and provides the control over a wide range of QDs size. The scaled-down colloidal Co QDs are applied for the NVM device fabrication. Colloidal synthesised Co QDs are spin-coated over silicon dioxide wafer for the fabrication of floating-gate NVM devices. Capacitance-voltage (C-V) and capacitance-time (C-t) measurements of the fabricated NVM device indicate a low voltage operation of device. A sweep voltages as small as 1.2-4 V lead to a flat band voltage shift of 0.35-1.5 V, evidencing the low operating voltage and low power NVM applications. Further, retention characteristics show a robust retention by fabricated NVM device. In addition, C-V measurements are done for the several samples in order to study the process repeatability. The work also is compared with the other processes for the floating gate memory device.
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    Application of Supercritical CO2 Fluid for Dielectric Improvement of SiOx Film
    (2009-01-01)
    Tsai, Chih-Tsung
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    Chang, Ting-Chang
    ;
    Liu, Po-Tsun
    ;
    Cheng, Yi-Li
    ;
    Kin, Kon-Tsu
    In this paper the supercritical carbon dioxide (SCCO2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (SiOx) film at 150 degrees C. After the treatment of SCCO2 fluid mixed with ethyl alcohol and pure H2O, the oxygen content of SiOx film increases and the traps within SiOx are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10(-2) to 3x10(-8) A/cm(2) at an electric field of 3 MV/cm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.
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    Luminescence mechanisms of silicon-rich nitride films fabricated by atmospheric pressure chemical vapor deposition in N-2 and H-2 atmospheres
    (2009-03-01)
    Lin, Chia-Hung
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    Uen, Wu-Yih
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    Lan, Shan-Ming
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    Huang, Yen-Chin
    ;
    Liao, Sen-Mao
    This work examines possible luminescence mechanisms of silicon-rich nitride (SRN) films that were fabricated by atmospheric pressure chemical vapor deposition (APCVD). Under an ambient gas of either H-2 or N-2, two SRN films were deposited using the same precursors of Si and N. While photoluminescence (PL) measurements of both as-deposited specimens revealed an intense luminescence band (1.8-3.8 eV), which was observable by the naked eye, a detailed examination of the high energy band of the PL spectra over 2.8 eV yielded different results for those samples that were fabricated in different ambiences. To determine the reason for these differences, Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy were conducted, suggesting unique chemical bonds and elemental ratio of nitrogen to silicon in SRN films. Further analysis involving plan-view high-resolution transmission electron microscopic observations of SRN films demonstrated the embedding of Si quantum dots (Si QDs), but with some differences depending on the deposition environment. Analyses of the results obtained suggest that the emission from SRN films that were deposited by APCVD is not only dominated by the quantum confinement effect of Si QDs, but also subordinately affected by the surface states around these Si QDs.
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    Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi2 Nanocrystals Nonvolatile Memory
    (2010-01-01)
    Hu, Chih-Wei
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chen, Yang-Dong
    ;
    Lin, Chao-Cheng
    In this work, nitric acid oxidation was studied to fabricate the tunneling oxide of nanocrystal memory devices. SiO2 about 4 nm thick was formed through oxidizing the sputtered Si film by immersing in nitric acid solution (HNO3:H2O=1:10) for 60 s. After oxide formation, a rapid thermal annealing process set at 700 degrees C for 30 s was used to improve oxide quality. In addition, the formed SiO2 film was analyzed by X-ray photoelectron, capacitance-voltage, and current density-voltage measurements to study the process of the nitric acid oxidation. After the investigation of the nitric acid oxidized SiO2, a 6 nm thick cobalt silicide thin film was deposited and aggregated on the formed SiO2 layer as the charge-trapping layer. The cobalt silicide nanocrystal memory device showed an obvious memory effect and good reliability, which confirms that the nitric acid oxidation method has potential for memory application.
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    Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing
    (2010-05-31)
    Feng, Li-Wei
    ;
    Chang, Chun-Yen
    ;
    Chang, Yao-Feng
    ;
    Chang, Ting-Chang
    ;
    Wang, Shin-Yuan
    In this paper, the influence of a 600 degrees C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO2/FeOx/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming voltage, set/reset voltages, and their dispersions, the resistance ratio of high-resistance state to low-resistance state is also enlarged after annealing. The effects of annealing on improving the resistance switching properties are discussed by x-ray diffraction and x-ray photon-emission spectra depth profile results. Additionally, good retention characteristics are exhibited in the annealed TiN/SiO2/FeOx/FePt resistance switching memory. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428777]
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    Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
    (2011-12-26)
    Chang, Kuan-Chang
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    Tsai, Tsung-Ming
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    Chang, Ting-Chang
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    Syu, Yong-En
    ;
    Wang, Chia-C.
    In the study, we reduced the operation current of resistance random access memory (RRAM) by supercritical CO2 (SCCO2) fluids treatment. The power consumption and joule heating degradation of RRAM device can be improved greatly by SCCO2 treatment. The defect of nickel-doped silicon oxide (Ni:SiOx) was passivated effectively by the supercritical fluid technology. The current conduction of high resistant state in post-treated Ni:SiOx film was transferred to Schottky emission from Frenkel-Pool due to the passivation effect. Additionally, we can demonstrate the passivation mechanism of SCCO2 for Ni:SiOx by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671991]
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    Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
    (2009)
    Lin, Chao-Cheng
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    Chang, Ting-Chang
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    Tu, Chun-Hao
    ;
    Chen, Wei-Ren
    ;
    Feng, Li-Wen
    An oxygen-incorporated Mo silicide layer was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge-storage characteristics of Mo nanocrystals influenced by Mo oxide and its surrounding oxide were investigated through X-ray photoelectron spectroscopy and electrical measurement. X-ray photoelectron spectral analyses revealed a redox reaction in the oxygen-incorporated Mo silicide layer after rapid thermal annealing at a critical temperature. The memory window and retention were improved because of the reduction of Mo oxide. Furthermore, the double-layer nanocrystal structure was fabricated through the annealed stacked oxygen incorporated Mo silicide layer. A larger memory window and long retention were found for the double-layer nanocrystal structure. We used an energy band diagram to explain the difference in retention characteristics between single- and double-layer structures.
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    Gettering of Ni from Nickel-Induced Lateral Crystallization Silicon Using Amorphous Silicon and Chemical Oxide
    (2009)
    Wang, Bau-Ming
    ;
    Wu, YewChung Sermon
    ;
    材料科學與工程學系
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    Department of Materials Science and Engineering
    Nickel contamination inside nickel-metal-induced lateral crystallization (NILC) polycrystalline silicon poses a problem in the fabrication of high-performance thin-film transistors. In this study, amorphous Si (alpha-Si) and chemical oxide (chem-SiO(2)) films were employed to reduce the impurity of Ni-metal within the NILC film. The top 100 nm thick alpha-Si layer served as a gettering layer, while the middle 5 nm thick chem-SiO(2) layer served as an etching stop layer. It was found that nickel contamination was greatly reduced after annealing at 550 degrees C for only 12 h.
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    Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
    (2009)
    Lin, Chao-Cheng
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    Chang, Ting-Chang
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    Tu, Chun-Hao
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    Chen, Wei-Ren
    ;
    Hu, Chih-Wei
    Mo nanocrystal memory was fabricated through annealing the oxygen-incorporated Mo and Si layers. We then investigated the influence an of ammonia plasma treatment on the nonvolatile memory characteristics of a charge storage layer composed of Mo nanocrystal memory embedded in SiO(x). Transmission electron microscopy revealed the nanostructure of the charge storage layer, and X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window reduced, and both retention and endurance improved after the treatment. The reduction in the memory window was attributed to the decrease in charge trapping centers in the surrounding oxide after the treatment. The improvement of retention was interpreted in terms of the nitrogen passivation of traps in the oxide around the Mo nanocrystals. The robust endurance characteristic was attributed to the improvement of the quality of the surrounding oxide by nitrogen passivation.
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    Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
    (2009-02-09)
    Lin, Chao-Cheng
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    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chen, Wei-Ren
    ;
    Hu, Chih-Wei
    We investigated ammonia plasma treatment influence on the nonvolatile memory characteristics of the charge storage layer composed of Mo nanocrystals embedded in nonstoichiometry oxide (SiO(x)). X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window was reduced and the retention and the endurance improved after the treatment. The reduction in the memory window and the improvement in retention were interpreted in terms of the nitrogen passivation of traps in the oxide around Mo nanocrystals. The robust endurance characteristic was attributed the improvement of the quality of the surrounding oxide by nitrogen passivation.