新世代三五族金氧半電晶體元件

Full metadata record

DC Field	Value	Language
dc.contributor.author	張翼	en_US
dc.contributor.author	CHANG EDWARD YI	en_US
dc.date.accessioned	2014-12-13T10:44:34Z	-
dc.date.available	2014-12-13T10:44:34Z	-
dc.date.issued	2010	en_US
dc.identifier.govdoc	NSC98-2923-E009-002-MY3	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/100057	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=1989855&docId=325263	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	新世代三五族金氧半電晶體元件	zh_TW
dc.title	III-V MOSFET for Next Generation	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學材料科學與工程學系（所）	zh_TW
Appears in Collections:	Research Plans

APA	張., & CHANG E. YI (2010). 新世代三五族金氧半電晶體元件. https://www.grb.gov.tw/search/planDetail?id=1989855&docId=325263.
Bibtex	@article{2010, title={新世代三五族金氧半電晶體元件}, author={張翼 and CHANG EDWARD YI}, journal={https://www.grb.gov.tw/search/planDetail?id=1989855&docId=325263}, year={2010}, url={https://ir.lib.nycu.edu.tw/handle/11536/100057?mode=full}, }