| 標題: | 有機與氧化物半導體之垂直載子遷移率及高效能金屬基極電晶體---總計畫及子計畫一:有機半導體之垂直載子遷移率及其餘金屬基極電晶體之應用(III) Vertical Carrier Mobility of Organic and Oxide Semiconductors and High-Performance Metal-Base Transistor (III) |
| 作者: | 孟心飛 MENG HSIN-FEI 國立交通大學物理研究所 |
| 關鍵字: | 空間電荷限制電晶體;高載子遷移率;空氣穩定;polymer space-charge-limited transistor;high carrier mobility;air stable |
| 公開日期: | 2010 |
| 官方說明文件#: | NSC99-2628-M009-001 |
| URI: | http://hdl.handle.net/11536/100260 https://www.grb.gov.tw/search/planDetail?id=2151071&docId=346380 |
| Appears in Collections: | Research Plans |
