以準分子雷射退火技術製作低溫複（單）晶矽薄膜電晶體元件

標題:	以準分子雷射退火技術製作低溫複（單）晶矽薄膜電晶體元件 Fabrication of Low Temperature Poly(Single)-Crystalline Silicon TFTs by Excimer Laser Annealing Tec
作者:	鄭晃忠 CHENG HUANG-CHUNG 國立交通大學電子工程學系
公開日期:	2000
官方說明文件#:	NSC89-2215-E009-108
URI:	http://hdl.handle.net/11536/100361 https://www.grb.gov.tw/search/planDetail?id=583906&docId=109711
Appears in Collections:	Research Plans

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.