Gettering of nickel within the Ni-metal induced lateral crystallization polycrystalline silicon film through the contact holes

doi:10.1143/JJAP.46.L1188

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DC 欄位	值	語言
dc.contributor.author	Hu, Chen-Ming	en_US
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.date.accessioned	2014-12-08T15:13:01Z	-
dc.date.available	2014-12-08T15:13:01Z	-
dc.date.issued	2007-12-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.46.L1188	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10047	-
dc.description.abstract	Ni-metal-induced lateral crystallization (NILC) of amorphous Si (alpha-Si) has been used to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). The current crystallization technology, however, often leads to trap Ni and NiSi2 precipitates, which degrade the device performance. In this study, alpha-Si film was coated on the top of contact holes as Ni-gettering layer. It was found the Ni-metal impurity within the NILC poly-Si film was reduced without addition mask.	en_US
dc.language.iso	en_US	en_US
dc.subject	nickel gettering	en_US
dc.subject	NILC	en_US
dc.subject	polycrystalline silicon	en_US
dc.title	Gettering of nickel within the Ni-metal induced lateral crystallization polycrystalline silicon film through the contact holes	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.46.L1188	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS	en_US
dc.citation.volume	46	en_US
dc.citation.issue	45-49	en_US
dc.citation.spage	L1188	en_US
dc.citation.epage	L1190	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000252043500035	-
dc.citation.woscount	3	-
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