氮化銦鎵和氮砷化鎵三元化合物薄膜製備及光電物理性質研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	陳衛國	en_US
dc.contributor.author	WEI-KUOCHEN	en_US
dc.date.accessioned	2014-12-13T10:46:05Z	-
dc.date.available	2014-12-13T10:46:05Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2112-M009-012	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/100638	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=523763&docId=95131	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	同價位元素雜質摻雜	zh_TW
dc.subject	氮砷化鎵	zh_TW
dc.subject	磊晶熱力學	zh_TW
dc.subject	有機金屬氣相磊晶	zh_TW
dc.subject	異質界面結構	zh_TW
dc.subject	Isoelectronic doping	en_US
dc.subject	GaAsN	en_US
dc.subject	Thermodynamics growth model	en_US
dc.title	氮化銦鎵和氮砷化鎵三元化合物薄膜製備及光電物理性質研究	zh_TW
dc.title	Epitaxy and Characterization of InGaN and GaAsN Alloys	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子物理系	zh_TW
Appears in Collections:	Research Plans

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