矽鍺應力層及非應力層的探討及高速電晶體之應用

Full metadata record

DC Field	Value	Language
dc.contributor.author	荊鳳德	en_US
dc.contributor.author	CHIN ALBERT	en_US
dc.date.accessioned	2014-12-13T10:46:17Z	-
dc.date.available	2014-12-13T10:46:17Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2215-E009-044	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/100716	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=720340&docId=135308	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	矽鍺應力層及非應力層的探討及高速電晶體之應用	zh_TW
dc.title	Investigation of Strained and Unstrained SiGe Layer and Its Application to High Speed MOSFET	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.