1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.author周武清en_US
dc.contributor.authorCHOU WU-CHINGen_US
dc.date.accessioned2014-12-13T10:46:22Z-
dc.date.available2014-12-13T10:46:22Z-
dc.date.issued2010en_US
dc.identifier.govdocNSC99-2119-M009-002zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/100733-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=2153608&docId=346892en_US
dc.description.abstract以電漿輔助分子束磊晶技術成長各式各樣的二六族半磁性半導體量子結構，提供給國內外物理學家研究新穎的自旋與光電物理外，本研究團隊將對二六族半磁性半導體單量子點自旋物理做深入的研究，並且研究單一量子點於耦合微共振腔中之量子同調操控。zh_TW
dc.description.abstractA broad variety of quantum structures made of II-VI compound semiconductors grown by plasma assisted molecular beam epitaxy will support domestic and foreign physicists to study novel spin and photonic physics. In addition, the spin physics of single diluted magnetic quantum dots and the coherent quantum control of single quantum dot coupled to resonant micro-cavity will be studied.en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject分子束磊晶術zh_TW
dc.subject二六族化合物半導體zh_TW
dc.subject半磁性半導體zh_TW
dc.subject碲化鋅zh_TW
dc.subject量子點zh_TW
dc.subject光激螢光zh_TW
dc.subject時間解析光激螢光zh_TW
dc.subject氧化鎘鋅zh_TW
dc.subject砷化鎵zh_TW
dc.subject奈米線zh_TW
dc.subjectmolecular beam epitaxyen_US
dc.subjectII-VI compound semiconductorsen_US
dc.subjectsemimagnetic semiconductorsen_US
dc.subjectZnTeen_US
dc.subjectquantum dotsen_US
dc.subjectphotoluminescence (PL)en_US
dc.subjecttime-resolved PLen_US
dc.subjectZnCdOen_US
dc.subjectGaAsen_US
dc.subjectnanowireen_US
dc.subjectcathodoluminescence spectroscopyen_US
dc.subjectZnMgOen_US
dc.subjectRaman scatteringen_US
dc.subjecthigh-pressure techniquesen_US
dc.title新穎材料開發計畫---二六族半磁性半導體磊晶核心設施之運作與新穎物理研究zh_TW
dc.titleOperation of Core Facility for II-VI Semimagnetic Semiconductor Epitaxy and Study of Novel Physicsen_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子物理學系（所）zh_TW
顯示於類別：研究計畫


文件中的檔案：

  1. 992119M009002.PDF

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。

相關內容
Loading...