完整後設資料紀錄
DC 欄位語言
dc.contributor.authorSyu, Jin-Siangen_US
dc.contributor.authorMeng, Chinchunen_US
dc.date.accessioned2014-12-08T15:13:03Z-
dc.date.available2014-12-08T15:13:03Z-
dc.date.issued2007-12-01en_US
dc.identifier.issn1531-1309en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LMWC.2007.910504en_US
dc.identifier.urihttp://hdl.handle.net/11536/10073-
dc.description.abstractA 2.4/5.7 GHz dual-band Gilbert upconversion mixer is demonstrated using 0.35 mu m SiGe BiCMOS technology. A bias-offset cross-coupled transconductance amplifier (TCA) is employed in the intermediate frequency port for the linearity improvement. The dual-band LC current combiner and the output shunt-shunt feedback buffer amplifier are in the radio frequency (RF) port. The mechanisms of the high linearity upconverter and, the design flow of the dual-band LC current combiner are established in this letter. The dual-band upconverter has conversion gain of 1.5/-0.2 dB, OP1dB of -10.5/-9 dBm, and OIP3 of 12/13 dBm for IF=100 MHz, RF= 2.4/5.7 GHz, respectively.en_US
dc.language.isoen_USen_US
dc.subjectdual-banden_US
dc.subjectGilbert mixeren_US
dc.subjectLC current combineren_US
dc.subjectshunt-shunt feedbacken_US
dc.subjectSiGe heterojunction bipolar transistor (HBT)en_US
dc.subjecttransconductance amplifier (TCA)en_US
dc.subjectWLANen_US
dc.title2.4/5.7 GHz dual-band high linearity gilbert upconverter utilizing bias-offset TCA and LC current combineren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LMWC.2007.910504en_US
dc.identifier.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERSen_US
dc.citation.volume17en_US
dc.citation.issue12en_US
dc.citation.spage876en_US
dc.citation.epage878en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000251743400022-
dc.citation.woscount1-
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