完整后设资料纪录
DC 栏位 | 值 | 语言 |
---|---|---|
dc.contributor.author | 张俊彦 | en_US |
dc.contributor.author | CHANG CHUN-YEN | en_US |
dc.date.accessioned | 2014-12-13T10:46:26Z | - |
dc.date.available | 2014-12-13T10:46:26Z | - |
dc.date.issued | 2010 | en_US |
dc.identifier.govdoc | NSC99-2221-E009-001 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/100763 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=2158511&docId=347364 | en_US |
dc.description.sponsorship | 行政院国家科学委员会 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 再成长界面 | zh_TW |
dc.subject | 氮化处理 | zh_TW |
dc.subject | 氮化铝镓 | zh_TW |
dc.subject | 分子数磊晶 | zh_TW |
dc.subject | Regrowth Interface | en_US |
dc.subject | nitridation | en_US |
dc.subject | AlGaN/GaN | en_US |
dc.subject | MBE | en_US |
dc.title | 整合MBE与MOCVD磊晶技术于三族氮化物高频功率电晶体磊晶结构之开发(III) | zh_TW |
dc.title | Development of the III-Nitride High Power High Frequency HEMT Structures Grown by Integration of MBE and MOCVD Technologies (III) | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 国立交通大学电子工程学系及电子研究所 | zh_TW |
显示于类别: | Research Plans |