完整后设资料纪录
DC 栏位语言
dc.contributor.author张俊彦en_US
dc.contributor.authorCHANG CHUN-YENen_US
dc.date.accessioned2014-12-13T10:46:26Z-
dc.date.available2014-12-13T10:46:26Z-
dc.date.issued2010en_US
dc.identifier.govdocNSC99-2221-E009-001zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/100763-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=2158511&docId=347364en_US
dc.description.sponsorship行政院国家科学委员会zh_TW
dc.language.isozh_TWen_US
dc.subject再成长界面zh_TW
dc.subject氮化处理zh_TW
dc.subject氮化铝镓zh_TW
dc.subject分子数磊晶zh_TW
dc.subjectRegrowth Interfaceen_US
dc.subjectnitridationen_US
dc.subjectAlGaN/GaNen_US
dc.subjectMBEen_US
dc.title整合MBE与MOCVD磊晶技术于三族氮化物高频功率电晶体磊晶结构之开发(III)zh_TW
dc.titleDevelopment of the III-Nitride High Power High Frequency HEMT Structures Grown by Integration of MBE and MOCVD Technologies (III)en_US
dc.typePlanen_US
dc.contributor.department国立交通大学电子工程学系及电子研究所zh_TW
显示于类别:Research Plans