整合MBE與MOCVD磊晶技術於三族氮化物高頻功率電晶體磊晶結構之開發(III)

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	張俊彥	en_US
dc.contributor.author	CHANG CHUN-YEN	en_US
dc.date.accessioned	2014-12-13T10:46:26Z	-
dc.date.available	2014-12-13T10:46:26Z	-
dc.date.issued	2010	en_US
dc.identifier.govdoc	NSC99-2221-E009-001	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/100763	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=2158511&docId=347364	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	再成長界面	zh_TW
dc.subject	氮化處理	zh_TW
dc.subject	氮化鋁鎵	zh_TW
dc.subject	分子數磊晶	zh_TW
dc.subject	Regrowth Interface	en_US
dc.subject	nitridation	en_US
dc.subject	AlGaN/GaN	en_US
dc.subject	MBE	en_US
dc.title	整合MBE與MOCVD磊晶技術於三族氮化物高頻功率電晶體磊晶結構之開發(III)	zh_TW
dc.title	Development of the III-Nitride High Power High Frequency HEMT Structures Grown by Integration of MBE and MOCVD Technologies (III)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
顯示於類別：	研究計畫