| 標題: | 薄氧化層中漏電流與Soft Breakdown特性與機制研究 Stress Induced Leakage Current and Soft Breakdown in Thin Oxides |
| 作者: | 汪大暉 WANG TAHUI 交通大學電子工程系 |
| 關鍵字: | 氧化層漏電流;快閃式記憶體;軟性崩潰;電荷傳導;SILC;Flash EEPROM;Soft breakdown;Charge transport |
| 公開日期: | 2000 |
| 官方說明文件#: | NSC89-2215-E009-031 |
| URI: | http://hdl.handle.net/11536/101116 https://www.grb.gov.tw/search/planDetail?id=542124&docId=99588 |
| Appears in Collections: | Research Plans |
- 積體電路元件中因氧化層漏電所引發可靠性問題的探討 / 鄒年凱;Niain-Kai Zous;汪大暉;Tahui Wang
- 穿隧氧化層內漏電流之暫態特性與物理機制 / 汪大暉;WANG TAHUI
- Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILC mechanism / Kang, TK;Chen, MJ;Liu, CH;Chang, YJ;Fan, SK
- 超薄閘氧化層電晶體中量子效益及軟崩潰之嶄新實驗觀察 / 葉士新;Shih-Hsin Yeh;陳明哲;Ming-Jer Chen
- 超薄氧化層崩潰特性之研究 / 李建源;Chien-Yuan Lee;黃調元;林鴻志;Tiao-Yuan Huang
- 深次微米MOSFET穿隧漏電流、鎖定及靜電放電之研究(II) / 陳明哲;CHEN MING-JER
- Role of positive trapped charge in stress-induced leakage current for flash EEPROM devices / Wang, TH;Zous, NK;Yeh, CC
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