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dc.contributor.author馮明憲en_US
dc.date.accessioned2014-12-13T10:48:01Z-
dc.date.available2014-12-13T10:48:01Z-
dc.date.issued2000en_US
dc.identifier.govdocNSC89-2215-E009-007zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/101226-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=542196&docId=99609en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject退火效應zh_TW
dc.subject薄膜電晶體zh_TW
dc.subject複晶矽zh_TW
dc.subjectAnnealing effecten_US
dc.subjectThin film transistoren_US
dc.subjectPolysiliconen_US
dc.title超高真空化學氣相沈積低溫新穎複晶矽薄膜電晶體之製作與可靠度分析---子計畫II:退火製程對超高真空化學氣相沈積法成長之複晶矽薄膜結構的影響與退火複晶矽薄膜電晶體的製作 (II)zh_TW
dc.titleAnnealing Effects on UHVCVD Polysilicon Thin-Film Structure and Fabrication of Annealed Polysilicon TFT (II)en_US
dc.typePlanen_US
dc.contributor.department交通大學電子工程系zh_TW
Appears in Collections:Research Plans