完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Hwang, Chih-Hong | en_US |
dc.contributor.author | Li, Yiming | en_US |
dc.contributor.author | Han, Ming-Hung | en_US |
dc.date.accessioned | 2014-12-08T15:13:07Z | - |
dc.date.available | 2014-12-08T15:13:07Z | - |
dc.date.issued | 2010-05-01 | en_US |
dc.identifier.issn | 0026-2714 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.microrel.2010.01.041 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/10122 | - |
dc.description.abstract | High-kappa/metal-gate and vertical channel transistors are well-known solutions to continue the device scaling. This work extensively estimates the influences of the intrinsic parameter fluctuations on nanoscale fin-type field-effect-transistors and circuits by using an experimentally validated three-dimensional device and coupled device-circuit simulations. The dominance fluctuation source in threshold voltage, gate capacitance, cut-off frequency, delay time, and power has been found. The emerging fluctuation source, workfunction fluctuation, shows significant impacts on DC characteristics: however, can be ignored in AC characteristics due to the screening effect of the inversion layer. (C) 2010 Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Statistical variability in FinFET devices with intrinsic parameter fluctuations | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/j.microrel.2010.01.041 | en_US |
dc.identifier.journal | MICROELECTRONICS RELIABILITY | en_US |
dc.citation.volume | 50 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | 635 | en_US |
dc.citation.epage | 638 | en_US |
dc.contributor.department | 傳播研究所 | zh_TW |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | Institute of Communication Studies | en_US |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000278728700014 | - |
顯示於類別: | 會議論文 |