Statistical variability in FinFET devices with intrinsic parameter fluctuations

Abstract

High-kappa/metal-gate and vertical channel transistors are well-known solutions to continue the device scaling. This work extensively estimates the influences of the intrinsic parameter fluctuations on nanoscale fin-type field-effect-transistors and circuits by using an experimentally validated three-dimensional device and coupled device-circuit simulations. The dominance fluctuation source in threshold voltage, gate capacitance, cut-off frequency, delay time, and power has been found. The emerging fluctuation source, workfunction fluctuation, shows significant impacts on DC characteristics: however, can be ignored in AC characteristics due to the screening effect of the inversion layer. (C) 2010 Elsevier Ltd. All rights reserved.